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Solution-processed germanium nanowire-positioned Schottky solar cells.

Yun JH, Park YC, Kim J, Lee HJ, Anderson WA, Park J - Nanoscale Res Lett (2011)

Bottom Line: Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process.A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow.This solution process may provide a route to the cost-effective nanostructure solar architecture.

View Article: PubMed Central - HTML - PubMed

Affiliation: Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, Korea. joonkim@kimm.re.kr.

ABSTRACT
Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically investigated. This solution process may provide a route to the cost-effective nanostructure solar architecture.

No MeSH data available.


GeNW-positioned Schottky solar cell. (a) A schematic of the multiple GeNWs Schottky device (Al-GeNWs-Pt). (b) SEM image showing the GeNWs in contact with the Pt and Al electrodes. (c) The dark I-V characteristics of the multiple GeNWs device show Schottky diode performance similar to the single GeNW. (d) Under one-sun illumination, the Schottky device yields a Voc of 177 mV and an Isc of 19.2 nA.
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Figure 4: GeNW-positioned Schottky solar cell. (a) A schematic of the multiple GeNWs Schottky device (Al-GeNWs-Pt). (b) SEM image showing the GeNWs in contact with the Pt and Al electrodes. (c) The dark I-V characteristics of the multiple GeNWs device show Schottky diode performance similar to the single GeNW. (d) Under one-sun illumination, the Schottky device yields a Voc of 177 mV and an Isc of 19.2 nA.

Mentions: The GeNW-containing solution was spread out onto the interdigitated metal electrodes. A schematic of the multiple GeNW-positioned Schottky device (Al-GeNWs-Pt) is presented in Figure 4a. Figure 4b is a SEM image showing that multiple GeNWs were contacted to the asymmetric metal electrodes.


Solution-processed germanium nanowire-positioned Schottky solar cells.

Yun JH, Park YC, Kim J, Lee HJ, Anderson WA, Park J - Nanoscale Res Lett (2011)

GeNW-positioned Schottky solar cell. (a) A schematic of the multiple GeNWs Schottky device (Al-GeNWs-Pt). (b) SEM image showing the GeNWs in contact with the Pt and Al electrodes. (c) The dark I-V characteristics of the multiple GeNWs device show Schottky diode performance similar to the single GeNW. (d) Under one-sun illumination, the Schottky device yields a Voc of 177 mV and an Isc of 19.2 nA.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211352&req=5

Figure 4: GeNW-positioned Schottky solar cell. (a) A schematic of the multiple GeNWs Schottky device (Al-GeNWs-Pt). (b) SEM image showing the GeNWs in contact with the Pt and Al electrodes. (c) The dark I-V characteristics of the multiple GeNWs device show Schottky diode performance similar to the single GeNW. (d) Under one-sun illumination, the Schottky device yields a Voc of 177 mV and an Isc of 19.2 nA.
Mentions: The GeNW-containing solution was spread out onto the interdigitated metal electrodes. A schematic of the multiple GeNW-positioned Schottky device (Al-GeNWs-Pt) is presented in Figure 4a. Figure 4b is a SEM image showing that multiple GeNWs were contacted to the asymmetric metal electrodes.

Bottom Line: Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process.A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow.This solution process may provide a route to the cost-effective nanostructure solar architecture.

View Article: PubMed Central - HTML - PubMed

Affiliation: Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, Korea. joonkim@kimm.re.kr.

ABSTRACT
Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically investigated. This solution process may provide a route to the cost-effective nanostructure solar architecture.

No MeSH data available.