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Solution-processed germanium nanowire-positioned Schottky solar cells.

Yun JH, Park YC, Kim J, Lee HJ, Anderson WA, Park J - Nanoscale Res Lett (2011)

Bottom Line: Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process.A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow.This solution process may provide a route to the cost-effective nanostructure solar architecture.

View Article: PubMed Central - HTML - PubMed

Affiliation: Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, Korea. joonkim@kimm.re.kr.

ABSTRACT
Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically investigated. This solution process may provide a route to the cost-effective nanostructure solar architecture.

No MeSH data available.


Related in: MedlinePlus

Current-voltage characteristics in dark condition. The dark I-V characteristics of (a) Pt-GeNW-Pt, (b) Al-GeNW-Al, and (c) Pt-GeNW-Al. Ohmic current flows were achieved from the symmetric metal contacts while the asymmetric Pt-Al contacts provide a rectifying current flow due to the Schottky junction.
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Figure 3: Current-voltage characteristics in dark condition. The dark I-V characteristics of (a) Pt-GeNW-Pt, (b) Al-GeNW-Al, and (c) Pt-GeNW-Al. Ohmic current flows were achieved from the symmetric metal contacts while the asymmetric Pt-Al contacts provide a rectifying current flow due to the Schottky junction.

Mentions: The dark I-V characteristics of a single GeNW were obtained from the three different systems. The intrinsic Ge has a work function of 4.33 eV, which is higher than that of Al (4.06 eV) and lower than that of Pt (5.6 eV). The ohmic current flows were obtained from the symmetric Pt-Pt or Al-Al metal contacts as shown in Figure 3a,b, respectively. Otherwise, the asymmetric Pt-Al metal contacts rectified the current flow, as shown in Figure 3c, which is attributed to the different metal contacts to the GeNW establishing an electron barrier between the Pt metal and GeNW and a hole barrier between the Al metal and GeNW.


Solution-processed germanium nanowire-positioned Schottky solar cells.

Yun JH, Park YC, Kim J, Lee HJ, Anderson WA, Park J - Nanoscale Res Lett (2011)

Current-voltage characteristics in dark condition. The dark I-V characteristics of (a) Pt-GeNW-Pt, (b) Al-GeNW-Al, and (c) Pt-GeNW-Al. Ohmic current flows were achieved from the symmetric metal contacts while the asymmetric Pt-Al contacts provide a rectifying current flow due to the Schottky junction.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211352&req=5

Figure 3: Current-voltage characteristics in dark condition. The dark I-V characteristics of (a) Pt-GeNW-Pt, (b) Al-GeNW-Al, and (c) Pt-GeNW-Al. Ohmic current flows were achieved from the symmetric metal contacts while the asymmetric Pt-Al contacts provide a rectifying current flow due to the Schottky junction.
Mentions: The dark I-V characteristics of a single GeNW were obtained from the three different systems. The intrinsic Ge has a work function of 4.33 eV, which is higher than that of Al (4.06 eV) and lower than that of Pt (5.6 eV). The ohmic current flows were obtained from the symmetric Pt-Pt or Al-Al metal contacts as shown in Figure 3a,b, respectively. Otherwise, the asymmetric Pt-Al metal contacts rectified the current flow, as shown in Figure 3c, which is attributed to the different metal contacts to the GeNW establishing an electron barrier between the Pt metal and GeNW and a hole barrier between the Al metal and GeNW.

Bottom Line: Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process.A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow.This solution process may provide a route to the cost-effective nanostructure solar architecture.

View Article: PubMed Central - HTML - PubMed

Affiliation: Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, Korea. joonkim@kimm.re.kr.

ABSTRACT
Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically investigated. This solution process may provide a route to the cost-effective nanostructure solar architecture.

No MeSH data available.


Related in: MedlinePlus