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Solution-processed germanium nanowire-positioned Schottky solar cells.

Yun JH, Park YC, Kim J, Lee HJ, Anderson WA, Park J - Nanoscale Res Lett (2011)

Bottom Line: Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process.A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow.This solution process may provide a route to the cost-effective nanostructure solar architecture.

View Article: PubMed Central - HTML - PubMed

Affiliation: Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, Korea. joonkim@kimm.re.kr.

ABSTRACT
Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically investigated. This solution process may provide a route to the cost-effective nanostructure solar architecture.

No MeSH data available.


Observations of the GeNW. (a) Low-magnification SEM image of as grown GeNWs. (b) High-magnification SEM image of GeNWs 40-80 nm in diameter. (c) TEM image of a single GeNW. (d) The HRTEM image shows that the GeNW was grown in the [111] direction. (e) The lattice was spaced at 0.327 nm corresponding to Ge (111). The inset is a diffractogram obtained from the HRTEM image.
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Figure 1: Observations of the GeNW. (a) Low-magnification SEM image of as grown GeNWs. (b) High-magnification SEM image of GeNWs 40-80 nm in diameter. (c) TEM image of a single GeNW. (d) The HRTEM image shows that the GeNW was grown in the [111] direction. (e) The lattice was spaced at 0.327 nm corresponding to Ge (111). The inset is a diffractogram obtained from the HRTEM image.

Mentions: Typical morphologies of GeNWs grown by the thermal vapor transport method are shown in Figure 1a,b. The length of the nanowires is generally above 10 μm with 40-80 nm in diameter. A TEM image of a single GeNW is shown in Figure 1c. A thin Ge oxide coating was observed, which may be formed during the growth of nanowires. High-resolution TEM (HRTEM) images are presented in Figure 1d,e. The lattices were spaced at 0.327 nm, corresponding to the Ge (111). Figure 1f shows a diffractogram obtained from an HRTEM image with the electron beam parallel to the [011] zone axis, indicating single crystallinity of the GeNW.


Solution-processed germanium nanowire-positioned Schottky solar cells.

Yun JH, Park YC, Kim J, Lee HJ, Anderson WA, Park J - Nanoscale Res Lett (2011)

Observations of the GeNW. (a) Low-magnification SEM image of as grown GeNWs. (b) High-magnification SEM image of GeNWs 40-80 nm in diameter. (c) TEM image of a single GeNW. (d) The HRTEM image shows that the GeNW was grown in the [111] direction. (e) The lattice was spaced at 0.327 nm corresponding to Ge (111). The inset is a diffractogram obtained from the HRTEM image.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211352&req=5

Figure 1: Observations of the GeNW. (a) Low-magnification SEM image of as grown GeNWs. (b) High-magnification SEM image of GeNWs 40-80 nm in diameter. (c) TEM image of a single GeNW. (d) The HRTEM image shows that the GeNW was grown in the [111] direction. (e) The lattice was spaced at 0.327 nm corresponding to Ge (111). The inset is a diffractogram obtained from the HRTEM image.
Mentions: Typical morphologies of GeNWs grown by the thermal vapor transport method are shown in Figure 1a,b. The length of the nanowires is generally above 10 μm with 40-80 nm in diameter. A TEM image of a single GeNW is shown in Figure 1c. A thin Ge oxide coating was observed, which may be formed during the growth of nanowires. High-resolution TEM (HRTEM) images are presented in Figure 1d,e. The lattices were spaced at 0.327 nm, corresponding to the Ge (111). Figure 1f shows a diffractogram obtained from an HRTEM image with the electron beam parallel to the [011] zone axis, indicating single crystallinity of the GeNW.

Bottom Line: Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process.A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow.This solution process may provide a route to the cost-effective nanostructure solar architecture.

View Article: PubMed Central - HTML - PubMed

Affiliation: Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, Korea. joonkim@kimm.re.kr.

ABSTRACT
Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically investigated. This solution process may provide a route to the cost-effective nanostructure solar architecture.

No MeSH data available.