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Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.


Related in: MedlinePlus

Temperature dependence of 1/f noise in pm-Si:H film. (a) Temperature dependence of 1/f noise in pm-Si:H film. Inset: temperature dependence of TCR value for samples with various doping ratios; (b) temperature dependence of total carriers number (NC) on various doping ratios in pm-Si:H films. Inset: temperature dependence of noise parameter in Hooge's formula.
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Figure 5: Temperature dependence of 1/f noise in pm-Si:H film. (a) Temperature dependence of 1/f noise in pm-Si:H film. Inset: temperature dependence of TCR value for samples with various doping ratios; (b) temperature dependence of total carriers number (NC) on various doping ratios in pm-Si:H films. Inset: temperature dependence of noise parameter in Hooge's formula.

Mentions: The temperature dependence of 1/f noise in pm-Si:H film resistor was also measured at 100 Hz for the various boron doping pm-Si:H film resistors at temperatures ranging from 300 to 420 K. In Figure 5a, the 1/f noise in pm-Si:H film resistor decreases with the increasing temperature. From the theoretical model proposed by Richard, there is a correlation between Sv and the temperature coefficient of resistance (TCR) given by Equation 2 [20]:(2)


Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Temperature dependence of 1/f noise in pm-Si:H film. (a) Temperature dependence of 1/f noise in pm-Si:H film. Inset: temperature dependence of TCR value for samples with various doping ratios; (b) temperature dependence of total carriers number (NC) on various doping ratios in pm-Si:H films. Inset: temperature dependence of noise parameter in Hooge's formula.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211346&req=5

Figure 5: Temperature dependence of 1/f noise in pm-Si:H film. (a) Temperature dependence of 1/f noise in pm-Si:H film. Inset: temperature dependence of TCR value for samples with various doping ratios; (b) temperature dependence of total carriers number (NC) on various doping ratios in pm-Si:H films. Inset: temperature dependence of noise parameter in Hooge's formula.
Mentions: The temperature dependence of 1/f noise in pm-Si:H film resistor was also measured at 100 Hz for the various boron doping pm-Si:H film resistors at temperatures ranging from 300 to 420 K. In Figure 5a, the 1/f noise in pm-Si:H film resistor decreases with the increasing temperature. From the theoretical model proposed by Richard, there is a correlation between Sv and the temperature coefficient of resistance (TCR) given by Equation 2 [20]:(2)

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.


Related in: MedlinePlus