Limits...
Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.


Related in: MedlinePlus

Relative noise power at 100 Hz vs voltage. Relative noise power demonstrates the dependence of 1/f noise in silicon film on structure variation.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211346&req=5

Figure 4: Relative noise power at 100 Hz vs voltage. Relative noise power demonstrates the dependence of 1/f noise in silicon film on structure variation.

Mentions: Figure 4 shows the relative voltage noise power Sv/V2 at 100 Hz. We obtained that Sv/V2 is constant at voltage less than 1 V, which indicates that 1/f noise in pm-Si:H film resistor does not originate from the resistance fluctuations at 100 Hz under our experimental conditions. Pm-Si:H film is generally accepted as inclusion material in nanocrystalline and nanosized clusters [18]. The above results indicate that pm-Si:H films are far from being homogeneous, and thus, one could predict that their electronic properties are affected by heterogeneity. For the clarification of our results, the structure and 1/f noise variations in amorphous, microcrystalline, and pm-Si:H films were compared [13]. The results demonstrate the dependence of 1/f noise in silicon film on the structure variation. Paul and Dijkhuis [19] proved the influence of metastable defect creation on the noise intensity in hydrogenated amorphous silicon. Hence, we also believe that the defects and heterogeneity cause 1/f noise in pm-Si:H.


Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Relative noise power at 100 Hz vs voltage. Relative noise power demonstrates the dependence of 1/f noise in silicon film on structure variation.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211346&req=5

Figure 4: Relative noise power at 100 Hz vs voltage. Relative noise power demonstrates the dependence of 1/f noise in silicon film on structure variation.
Mentions: Figure 4 shows the relative voltage noise power Sv/V2 at 100 Hz. We obtained that Sv/V2 is constant at voltage less than 1 V, which indicates that 1/f noise in pm-Si:H film resistor does not originate from the resistance fluctuations at 100 Hz under our experimental conditions. Pm-Si:H film is generally accepted as inclusion material in nanocrystalline and nanosized clusters [18]. The above results indicate that pm-Si:H films are far from being homogeneous, and thus, one could predict that their electronic properties are affected by heterogeneity. For the clarification of our results, the structure and 1/f noise variations in amorphous, microcrystalline, and pm-Si:H films were compared [13]. The results demonstrate the dependence of 1/f noise in silicon film on the structure variation. Paul and Dijkhuis [19] proved the influence of metastable defect creation on the noise intensity in hydrogenated amorphous silicon. Hence, we also believe that the defects and heterogeneity cause 1/f noise in pm-Si:H.

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.


Related in: MedlinePlus