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Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.


Log-log plot of power spectra density for various doping ratios in pm-films at 50 mV bias.
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Figure 3: Log-log plot of power spectra density for various doping ratios in pm-films at 50 mV bias.

Mentions: Figure 3 shows a logarithmic plot of power spectral density, which is averaged over 30 measurements, versus frequency for different doping ratios in pm-Si:H films at 300 K. The decrease of noise is inversely proportional to frequency. Moreover, the 1/f noise decreased with the increment of boron doping ratio in pm-Si:H samples. Conventionally, the results of 1/f noise measurements are discussed using Equation 1 originally introduced by Hooge [16]:(1)


Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Log-log plot of power spectra density for various doping ratios in pm-films at 50 mV bias.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211346&req=5

Figure 3: Log-log plot of power spectra density for various doping ratios in pm-films at 50 mV bias.
Mentions: Figure 3 shows a logarithmic plot of power spectral density, which is averaged over 30 measurements, versus frequency for different doping ratios in pm-Si:H films at 300 K. The decrease of noise is inversely proportional to frequency. Moreover, the 1/f noise decreased with the increment of boron doping ratio in pm-Si:H samples. Conventionally, the results of 1/f noise measurements are discussed using Equation 1 originally introduced by Hooge [16]:(1)

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.