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Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.


Raman spectroscopy of polymorphous silicon samples. Raman spectroscopy for pm-Si:H samples (A, B, C, D), the crystal volume fractions XC (%) obtained by Raman is consistent with the results from SE measurements.
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Figure 2: Raman spectroscopy of polymorphous silicon samples. Raman spectroscopy for pm-Si:H samples (A, B, C, D), the crystal volume fractions XC (%) obtained by Raman is consistent with the results from SE measurements.

Mentions: The results in Table 1 show that pm-Si:H films deposited at higher doping ratio were characterized by high hydrogen content and crystalline fraction, and negligible void fraction. As shown in Figure 2, because of its nanocrystalline nature, the crystalline Raman peak of pm-Si:H exhibits a frequency downshift and peak broadening caused by a phonon confinement effect. A peak (In) is observed between 480 cm-1 (Ia: amorphous silicon) and 520 cm-1 (Ic: microcrystalline silicon). The crystalline volume fraction XC of these films has been calculated from the relation XC = (In + Ic)/(Ia + In + Ic) [13]. In this study, the results have proven that the crystalline volume fractions (XC) measured by SE and Raman spectroscopy are highly consistent.


Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Raman spectroscopy of polymorphous silicon samples. Raman spectroscopy for pm-Si:H samples (A, B, C, D), the crystal volume fractions XC (%) obtained by Raman is consistent with the results from SE measurements.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211346&req=5

Figure 2: Raman spectroscopy of polymorphous silicon samples. Raman spectroscopy for pm-Si:H samples (A, B, C, D), the crystal volume fractions XC (%) obtained by Raman is consistent with the results from SE measurements.
Mentions: The results in Table 1 show that pm-Si:H films deposited at higher doping ratio were characterized by high hydrogen content and crystalline fraction, and negligible void fraction. As shown in Figure 2, because of its nanocrystalline nature, the crystalline Raman peak of pm-Si:H exhibits a frequency downshift and peak broadening caused by a phonon confinement effect. A peak (In) is observed between 480 cm-1 (Ia: amorphous silicon) and 520 cm-1 (Ic: microcrystalline silicon). The crystalline volume fraction XC of these films has been calculated from the relation XC = (In + Ic)/(Ia + In + Ic) [13]. In this study, the results have proven that the crystalline volume fractions (XC) measured by SE and Raman spectroscopy are highly consistent.

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.