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Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.


Schematic of measurement system. (a) Schematic of coplanar electrode configuration for thin pm-Si:H film resistance measurement; (b) schematic diagram of low-frequency noise measurement system.
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Figure 1: Schematic of measurement system. (a) Schematic of coplanar electrode configuration for thin pm-Si:H film resistance measurement; (b) schematic diagram of low-frequency noise measurement system.

Mentions: The pm-Si:H films were obtained by using RF PECVD [11]. As shown in Figure 1a, Coplanar nickel electrodes (about 50 nm) were evaporated onto the pm-Si:H films and lifted off to make linear I-V contact. In Figure 1b, in order to reduce external noise disturbance, the measuring circuit was placed in a metal box. The noise and electrical measurements were performed at various temperatures using an ESL-02KA thermostat. Hall measurements were performed using a BioRad HL5560 Hall system coupled with helium cryostat. The structure of pm-Si:H films was characterized using a SE850 spectroscopic ellipsometer with Bruggeman effective medium model.


Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.

Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W, Salamo G - Nanoscale Res Lett (2011)

Schematic of measurement system. (a) Schematic of coplanar electrode configuration for thin pm-Si:H film resistance measurement; (b) schematic diagram of low-frequency noise measurement system.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211346&req=5

Figure 1: Schematic of measurement system. (a) Schematic of coplanar electrode configuration for thin pm-Si:H film resistance measurement; (b) schematic diagram of low-frequency noise measurement system.
Mentions: The pm-Si:H films were obtained by using RF PECVD [11]. As shown in Figure 1a, Coplanar nickel electrodes (about 50 nm) were evaporated onto the pm-Si:H films and lifted off to make linear I-V contact. In Figure 1b, in order to reduce external noise disturbance, the measuring circuit was placed in a metal box. The noise and electrical measurements were performed at various temperatures using an ESL-02KA thermostat. Hall measurements were performed using a BioRad HL5560 Hall system coupled with helium cryostat. The structure of pm-Si:H films was characterized using a SE850 spectroscopic ellipsometer with Bruggeman effective medium model.

Bottom Line: The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio.The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR).The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.

ABSTRACT
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.

No MeSH data available.