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Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method.

Dufour C, Cardin J, Debieu O, Fafin A, Gourbilleau F - Nanoscale Res Lett (2011)

Bottom Line: The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves.Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s.A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

View Article: PubMed Central - HTML - PubMed

Affiliation: CIMAP, CEA/CNRS/ENSICAEN/UCBN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France. christian.dufour@ensicaen.fr.

ABSTRACT
By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng) concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

No MeSH data available.


Related in: MedlinePlus

(yz) map of  in W.m-2 NSi 5 1022 m-3/ = 5 1022 m -3.
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Figure 6: (yz) map of in W.m-2 NSi 5 1022 m-3/ = 5 1022 m -3.

Mentions: In order to reduce the computing time, in addition to the scaling method, we start the calculations with Si-ng levels already populated at the maximum inversion rate, NSi = = 5 1022 m-3. Hence, for a given total Si-ng concentration of 1023 m-3, this result (Figure 6) can be compared to the preceding one where NSi = 1023 m-3 and (Figure 5). The propagation of the pump power within the waveguide seems to be similarly attenuated in both cases. The main difference occurs in the N3 level concentration which is directly populated from the excited level. In case of maximum inversion rate, the stationary regime is reached and the concentration becomes equal to 1018 m-3. In case of NSi = 1023 m-3 and starting concentration, the N3 concentration does not reach a stationary regime and stays below several 1017 m-3.


Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method.

Dufour C, Cardin J, Debieu O, Fafin A, Gourbilleau F - Nanoscale Res Lett (2011)

(yz) map of  in W.m-2 NSi 5 1022 m-3/ = 5 1022 m -3.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211342&req=5

Figure 6: (yz) map of in W.m-2 NSi 5 1022 m-3/ = 5 1022 m -3.
Mentions: In order to reduce the computing time, in addition to the scaling method, we start the calculations with Si-ng levels already populated at the maximum inversion rate, NSi = = 5 1022 m-3. Hence, for a given total Si-ng concentration of 1023 m-3, this result (Figure 6) can be compared to the preceding one where NSi = 1023 m-3 and (Figure 5). The propagation of the pump power within the waveguide seems to be similarly attenuated in both cases. The main difference occurs in the N3 level concentration which is directly populated from the excited level. In case of maximum inversion rate, the stationary regime is reached and the concentration becomes equal to 1018 m-3. In case of NSi = 1023 m-3 and starting concentration, the N3 concentration does not reach a stationary regime and stays below several 1017 m-3.

Bottom Line: The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves.Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s.A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

View Article: PubMed Central - HTML - PubMed

Affiliation: CIMAP, CEA/CNRS/ENSICAEN/UCBN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France. christian.dufour@ensicaen.fr.

ABSTRACT
By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng) concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

No MeSH data available.


Related in: MedlinePlus