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Simple two-step fabrication method of Bi2Te3 nanowires.

Kang J, Noh JS, Lee W - Nanoscale Res Lett (2011)

Bottom Line: Its performance is expected to be greatly improved when the material takes nanowire structures.However, it is very difficult to grow high-quality Bi2Te3 nanowires.Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea. wooyoung@yonsei.ac.kr.

ABSTRACT
Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

No MeSH data available.


Composition analysis of a Bi2Te3 nanowire. (a) A HAADF image of the Bi2Te3 nanowire. (b) EDS line scan profiles showing the distributions of Bi (cyan, 39%) and Te (red, 61%) through the nanowire. (c,d) Elemental mapping images show the uniform distributions of Bi (cyan) and Te (red) along the nanowire.
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Figure 3: Composition analysis of a Bi2Te3 nanowire. (a) A HAADF image of the Bi2Te3 nanowire. (b) EDS line scan profiles showing the distributions of Bi (cyan, 39%) and Te (red, 61%) through the nanowire. (c,d) Elemental mapping images show the uniform distributions of Bi (cyan) and Te (red) along the nanowire.

Mentions: To confirm the chemical composition of the Bi2Te3 nanowires, scanning TEM (STEM) and energy dispersive X-ray spectroscopy (EDS) were utilized. Figure 3a is a high-angle angular dark field (HAADF) STEM image of a Bi2Te3 nanowire with a diameter of 78 nm. The EDS line scan profiles show the uniform atomic distribution of Bi and Te elements through the whole nanowire, as displayed in Figure 3b. More importantly, the atomic ratios of Bi and Te are analyzed to be 39 ± 1 and 61 ± 1%, respectively. This reveals that the nanowire is composed of the thermodynamically stable, stoichiometric Bi2Te3 phase within the measurement error of STEM. The composition of Bi:Te = 2:3 is further confirmed by STEM elemental mappings across the same nanowire (see Figure 3c, d).


Simple two-step fabrication method of Bi2Te3 nanowires.

Kang J, Noh JS, Lee W - Nanoscale Res Lett (2011)

Composition analysis of a Bi2Te3 nanowire. (a) A HAADF image of the Bi2Te3 nanowire. (b) EDS line scan profiles showing the distributions of Bi (cyan, 39%) and Te (red, 61%) through the nanowire. (c,d) Elemental mapping images show the uniform distributions of Bi (cyan) and Te (red) along the nanowire.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211341&req=5

Figure 3: Composition analysis of a Bi2Te3 nanowire. (a) A HAADF image of the Bi2Te3 nanowire. (b) EDS line scan profiles showing the distributions of Bi (cyan, 39%) and Te (red, 61%) through the nanowire. (c,d) Elemental mapping images show the uniform distributions of Bi (cyan) and Te (red) along the nanowire.
Mentions: To confirm the chemical composition of the Bi2Te3 nanowires, scanning TEM (STEM) and energy dispersive X-ray spectroscopy (EDS) were utilized. Figure 3a is a high-angle angular dark field (HAADF) STEM image of a Bi2Te3 nanowire with a diameter of 78 nm. The EDS line scan profiles show the uniform atomic distribution of Bi and Te elements through the whole nanowire, as displayed in Figure 3b. More importantly, the atomic ratios of Bi and Te are analyzed to be 39 ± 1 and 61 ± 1%, respectively. This reveals that the nanowire is composed of the thermodynamically stable, stoichiometric Bi2Te3 phase within the measurement error of STEM. The composition of Bi:Te = 2:3 is further confirmed by STEM elemental mappings across the same nanowire (see Figure 3c, d).

Bottom Line: Its performance is expected to be greatly improved when the material takes nanowire structures.However, it is very difficult to grow high-quality Bi2Te3 nanowires.Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea. wooyoung@yonsei.ac.kr.

ABSTRACT
Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

No MeSH data available.