Limits...
Simple two-step fabrication method of Bi2Te3 nanowires.

Kang J, Noh JS, Lee W - Nanoscale Res Lett (2011)

Bottom Line: Its performance is expected to be greatly improved when the material takes nanowire structures.However, it is very difficult to grow high-quality Bi2Te3 nanowires.Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea. wooyoung@yonsei.ac.kr.

ABSTRACT
Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

No MeSH data available.


A low-magnification TEM image shows an individual Bi2Te3 nanowire with a diameter of 78 nm. A SAED pattern reveals that the Bi2Te3 nanowire is grown in [110] direction with high single-crystallinity. A high-resolution TEM image also indicates highly single-crystalline atomic arrangements without any defects.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211341&req=5

Figure 2: A low-magnification TEM image shows an individual Bi2Te3 nanowire with a diameter of 78 nm. A SAED pattern reveals that the Bi2Te3 nanowire is grown in [110] direction with high single-crystallinity. A high-resolution TEM image also indicates highly single-crystalline atomic arrangements without any defects.

Mentions: TEM analyses of Bi2Te3 nanowires grown by the two-step process were performed. Bi2Te3 nanowires have a cylindrical shape, several tens of nanometers in diameter and several hundreds of micrometers in length. Figure 2 exhibits representative TEM images of a Bi2Te3 nanowire with a diameter of approximately 80 nm. From the selected area electron diffraction (SAED) pattern in the direction perpendicular to the longitudinal axis of the nanowire, it can be recognized that the Bi2Te3 nanowire is highly single-crystalline and its growth direction is [110]. A HR-TEM image confirms that the Bi2Te3 nanowire is oriented to [110] the direction with single-crystalline and defect-free atomic arrangements.


Simple two-step fabrication method of Bi2Te3 nanowires.

Kang J, Noh JS, Lee W - Nanoscale Res Lett (2011)

A low-magnification TEM image shows an individual Bi2Te3 nanowire with a diameter of 78 nm. A SAED pattern reveals that the Bi2Te3 nanowire is grown in [110] direction with high single-crystallinity. A high-resolution TEM image also indicates highly single-crystalline atomic arrangements without any defects.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211341&req=5

Figure 2: A low-magnification TEM image shows an individual Bi2Te3 nanowire with a diameter of 78 nm. A SAED pattern reveals that the Bi2Te3 nanowire is grown in [110] direction with high single-crystallinity. A high-resolution TEM image also indicates highly single-crystalline atomic arrangements without any defects.
Mentions: TEM analyses of Bi2Te3 nanowires grown by the two-step process were performed. Bi2Te3 nanowires have a cylindrical shape, several tens of nanometers in diameter and several hundreds of micrometers in length. Figure 2 exhibits representative TEM images of a Bi2Te3 nanowire with a diameter of approximately 80 nm. From the selected area electron diffraction (SAED) pattern in the direction perpendicular to the longitudinal axis of the nanowire, it can be recognized that the Bi2Te3 nanowire is highly single-crystalline and its growth direction is [110]. A HR-TEM image confirms that the Bi2Te3 nanowire is oriented to [110] the direction with single-crystalline and defect-free atomic arrangements.

Bottom Line: Its performance is expected to be greatly improved when the material takes nanowire structures.However, it is very difficult to grow high-quality Bi2Te3 nanowires.Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea. wooyoung@yonsei.ac.kr.

ABSTRACT
Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

No MeSH data available.