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ZnSe nanotrenches: formation mechanism and its role as a 1D template.

Wang G, Lok SK, Sou IK - Nanoscale Res Lett (2011)

Bottom Line: High-resolution transmission electron microscopy was used to characterize the microstructures of ZnSe nanotrenches induced by mobile Au-alloy droplets.The contact side interfaces between the AuZnδ alloy droplets and the ZnSe as well as the four side walls of the resulting <011>-oriented nanotrenches were found all belong to the {111} plane family, with the front and back walls being the {111}A planes while the other two side walls being the {111}B planes.These findings offer a deeper understanding on the formation mechanism of the nanotrenches.

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Affiliation: Nano Science and Technology Program, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China. phiksou@ust.hk.

ABSTRACT
High-resolution transmission electron microscopy was used to characterize the microstructures of ZnSe nanotrenches induced by mobile Au-alloy droplets. The contact side interfaces between the AuZnδ alloy droplets and the ZnSe as well as the four side walls of the resulting <011>-oriented nanotrenches were found all belong to the {111} plane family, with the front and back walls being the {111}A planes while the other two side walls being the {111}B planes. These findings offer a deeper understanding on the formation mechanism of the nanotrenches. Pure Au nanodashes were formed upon further deposition of Au on the nanotrenches.PACS: 61.46.Df, Structure of nanocrystals and nanoparticles. 81.16.Rf, Micro and nanoscale pattern formation. 68.37.Og, High resolution transmission electron microscopy.

No MeSH data available.


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Cross-sectional TEM image of nanotrenches with the viewing zone axis along [011] orientation. Bottom-left inset shows the HRTEM image taken for the AuZnδ NP on the left side of this figure with a Fourier transform pattern of the nearby ZnSe lattice. Top-right inset shows the HRTEM image of the AuZnδ NP on the right side of this figure.
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Figure 1: Cross-sectional TEM image of nanotrenches with the viewing zone axis along [011] orientation. Bottom-left inset shows the HRTEM image taken for the AuZnδ NP on the left side of this figure with a Fourier transform pattern of the nearby ZnSe lattice. Top-right inset shows the HRTEM image of the AuZnδ NP on the right side of this figure.

Mentions: Figure 1 shows a cross-sectional TEM view of a number of nanotrenches on a piece cut from sample #1 with the viewing zone axis along the [011] direction, that is, along the nanotrench orientation; we term this as a front view observation. The AuZnδ NPs of two of these nanotrenches are by chance located in the viewing zone of this cross-sectional sample, while the rest of them just display the front view of the "empty" trench body. One can see that the front view cross section of the nanotrenches has a V shape in general, while that of the AuZnδ NPs has a V shape for the portion embedded in the ZnSe layer and an arc shape for the portion above the trench body. The bottom-left inset in Figure 1 shows an HRTEM image of the AuZnδ NP on the left side of this figure. In this inset, a Fourier transform pattern of the ZnSe lattice near the NP is also shown. Using the Fourier transform pattern as references, both the interfaces of the V shape are found to be the members of the {111} plane family of ZnSe as indicated in the bottom-left inset of Figure 1. In a previously published article, we have identified that the nanotrenches are along either the [011] or directions that are anti-parallel with each other, in which the identification was based on the orientation of the resulting nanotrenches formed on a GaAs(100) substrate with a pretilting angle of 2° off toward the [111]A direction [16]. Figure S3 in Additional file 3 shows the planar representation of the orientation relationship of the crystal planes of the ZnSe(100) layer, which is deduced from the relevant data given by the manufacturer of the GaAs(100) wafers used in this study. As can be seen in Figure S3, the interfacial planes of the V shape shown in Figure 1 are B plane and B planes, respectively, and both are Se-terminated planes. The top-right inset in Figure 1 shows the HRTEM image of a portion of the AuZnδ NP on the right side of this figure. The moire fringes located near the V-shaped region within the NP together with the regular lattice pattern in the rest of the NP region indicate that it is single crystalline. We have performed separately a detailed analysis on the microstructure of a few NPs of this sample using the built-in electron diffraction technique. It was found that the NPs are FCC structures with various orientation relationships with the underlying ZnSe lattice and their lattice constants are slightly smaller than that of pure Au lattice being attributed to the inclusion of small amount of Zn as reported in our previous publication [16].


ZnSe nanotrenches: formation mechanism and its role as a 1D template.

Wang G, Lok SK, Sou IK - Nanoscale Res Lett (2011)

Cross-sectional TEM image of nanotrenches with the viewing zone axis along [011] orientation. Bottom-left inset shows the HRTEM image taken for the AuZnδ NP on the left side of this figure with a Fourier transform pattern of the nearby ZnSe lattice. Top-right inset shows the HRTEM image of the AuZnδ NP on the right side of this figure.
© Copyright Policy - open-access
Related In: Results  -  Collection

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Figure 1: Cross-sectional TEM image of nanotrenches with the viewing zone axis along [011] orientation. Bottom-left inset shows the HRTEM image taken for the AuZnδ NP on the left side of this figure with a Fourier transform pattern of the nearby ZnSe lattice. Top-right inset shows the HRTEM image of the AuZnδ NP on the right side of this figure.
Mentions: Figure 1 shows a cross-sectional TEM view of a number of nanotrenches on a piece cut from sample #1 with the viewing zone axis along the [011] direction, that is, along the nanotrench orientation; we term this as a front view observation. The AuZnδ NPs of two of these nanotrenches are by chance located in the viewing zone of this cross-sectional sample, while the rest of them just display the front view of the "empty" trench body. One can see that the front view cross section of the nanotrenches has a V shape in general, while that of the AuZnδ NPs has a V shape for the portion embedded in the ZnSe layer and an arc shape for the portion above the trench body. The bottom-left inset in Figure 1 shows an HRTEM image of the AuZnδ NP on the left side of this figure. In this inset, a Fourier transform pattern of the ZnSe lattice near the NP is also shown. Using the Fourier transform pattern as references, both the interfaces of the V shape are found to be the members of the {111} plane family of ZnSe as indicated in the bottom-left inset of Figure 1. In a previously published article, we have identified that the nanotrenches are along either the [011] or directions that are anti-parallel with each other, in which the identification was based on the orientation of the resulting nanotrenches formed on a GaAs(100) substrate with a pretilting angle of 2° off toward the [111]A direction [16]. Figure S3 in Additional file 3 shows the planar representation of the orientation relationship of the crystal planes of the ZnSe(100) layer, which is deduced from the relevant data given by the manufacturer of the GaAs(100) wafers used in this study. As can be seen in Figure S3, the interfacial planes of the V shape shown in Figure 1 are B plane and B planes, respectively, and both are Se-terminated planes. The top-right inset in Figure 1 shows the HRTEM image of a portion of the AuZnδ NP on the right side of this figure. The moire fringes located near the V-shaped region within the NP together with the regular lattice pattern in the rest of the NP region indicate that it is single crystalline. We have performed separately a detailed analysis on the microstructure of a few NPs of this sample using the built-in electron diffraction technique. It was found that the NPs are FCC structures with various orientation relationships with the underlying ZnSe lattice and their lattice constants are slightly smaller than that of pure Au lattice being attributed to the inclusion of small amount of Zn as reported in our previous publication [16].

Bottom Line: High-resolution transmission electron microscopy was used to characterize the microstructures of ZnSe nanotrenches induced by mobile Au-alloy droplets.The contact side interfaces between the AuZnδ alloy droplets and the ZnSe as well as the four side walls of the resulting <011>-oriented nanotrenches were found all belong to the {111} plane family, with the front and back walls being the {111}A planes while the other two side walls being the {111}B planes.These findings offer a deeper understanding on the formation mechanism of the nanotrenches.

View Article: PubMed Central - HTML - PubMed

Affiliation: Nano Science and Technology Program, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China. phiksou@ust.hk.

ABSTRACT
High-resolution transmission electron microscopy was used to characterize the microstructures of ZnSe nanotrenches induced by mobile Au-alloy droplets. The contact side interfaces between the AuZnδ alloy droplets and the ZnSe as well as the four side walls of the resulting <011>-oriented nanotrenches were found all belong to the {111} plane family, with the front and back walls being the {111}A planes while the other two side walls being the {111}B planes. These findings offer a deeper understanding on the formation mechanism of the nanotrenches. Pure Au nanodashes were formed upon further deposition of Au on the nanotrenches.PACS: 61.46.Df, Structure of nanocrystals and nanoparticles. 81.16.Rf, Micro and nanoscale pattern formation. 68.37.Og, High resolution transmission electron microscopy.

No MeSH data available.


Related in: MedlinePlus