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Atomic scale investigation of silicon nanowires and nanoclusters.

Roussel M, Chen W, Talbot E, Lardé R, Cadel E, Gourbilleau F, Grandidier B, Stiévenard D, Pareige P - Nanoscale Res Lett (2011)

Bottom Line: Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant.The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed.Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.

No MeSH data available.


Size distribution of SiNC measured in the SRSO layers of the analyzed volume.
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Figure 4: Size distribution of SiNC measured in the SRSO layers of the analyzed volume.

Mentions: Size distribution of SiNCs can be accurately established with the detection of all the crystalline and amorphous silicon precipitates. Figure 4 shows the SiNCs size distribution. The mean diameter of SiNCs is 2.9 nm and sizes range from 0.5 to 4.5 nm. Most of SiNCs diameters lie in the range of 3.0-4.0 nm which corresponds to the thickness of the SRSO layer indicating that Si atoms in excess diffuse only in the SRSO layers. SiO2 layers act as diffusion barriers as predicted. The number density of particles is estimated to be 9.0 × 1018 ± 1.0 × 1018 cm-3. This density is very close to the theoretical density number of particles which can be calculated if all the Si excess forms a precipitate of 3.8-nm diameter (layer thickness: 11.5 × 1018 cm-3).


Atomic scale investigation of silicon nanowires and nanoclusters.

Roussel M, Chen W, Talbot E, Lardé R, Cadel E, Gourbilleau F, Grandidier B, Stiévenard D, Pareige P - Nanoscale Res Lett (2011)

Size distribution of SiNC measured in the SRSO layers of the analyzed volume.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211335&req=5

Figure 4: Size distribution of SiNC measured in the SRSO layers of the analyzed volume.
Mentions: Size distribution of SiNCs can be accurately established with the detection of all the crystalline and amorphous silicon precipitates. Figure 4 shows the SiNCs size distribution. The mean diameter of SiNCs is 2.9 nm and sizes range from 0.5 to 4.5 nm. Most of SiNCs diameters lie in the range of 3.0-4.0 nm which corresponds to the thickness of the SRSO layer indicating that Si atoms in excess diffuse only in the SRSO layers. SiO2 layers act as diffusion barriers as predicted. The number density of particles is estimated to be 9.0 × 1018 ± 1.0 × 1018 cm-3. This density is very close to the theoretical density number of particles which can be calculated if all the Si excess forms a precipitate of 3.8-nm diameter (layer thickness: 11.5 × 1018 cm-3).

Bottom Line: Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant.The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed.Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.

No MeSH data available.