Limits...
Atomic scale investigation of silicon nanowires and nanoclusters.

Roussel M, Chen W, Talbot E, Lardé R, Cadel E, Gourbilleau F, Grandidier B, Stiévenard D, Pareige P - Nanoscale Res Lett (2011)

Bottom Line: Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant.The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed.Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.

No MeSH data available.


Three-dimensional reconstruction of one part of p-type SiNW characterized by laser-assisted APT. The reconstruction volume is 16 × 16 × 58 nm3. The red and black dots represent Si and B atoms, respectively. From the reconstruction, it can be seen that, B atoms are homogeneously distributed in the SiNW core with a relatively high concentration: 1.4 ± 0.1 × 1020 B/cm3.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211335&req=5

Figure 2: Three-dimensional reconstruction of one part of p-type SiNW characterized by laser-assisted APT. The reconstruction volume is 16 × 16 × 58 nm3. The red and black dots represent Si and B atoms, respectively. From the reconstruction, it can be seen that, B atoms are homogeneously distributed in the SiNW core with a relatively high concentration: 1.4 ± 0.1 × 1020 B/cm3.

Mentions: The p-doped SiNW is also characterized by laser-assisted APT. We chose diborane as the p-type dopant reactant, and Au and silane as the catalyst and the Si precursor, respectively. The growth temperature and the time of SiNW are fixed as 500°C and 30 min, respectively. Silane is diluted with hydrogen in a ratio of 50:49, and the flow rate of diborane is 1 sccm. Figure 2 represents the 3 D reconstruction of a p-type SiNW investigated by APT. The reconstruction volume is 16 × 16 × 58 nm3. The red and black dots represent Si and B atoms, respectively. The B concentration is 1.4 ± 0.1 × 1020 B/cm3. It can be seen from Figure 2 that B atoms are homogeneously distributed in the core of the SiNW with a relatively high doping concentration.


Atomic scale investigation of silicon nanowires and nanoclusters.

Roussel M, Chen W, Talbot E, Lardé R, Cadel E, Gourbilleau F, Grandidier B, Stiévenard D, Pareige P - Nanoscale Res Lett (2011)

Three-dimensional reconstruction of one part of p-type SiNW characterized by laser-assisted APT. The reconstruction volume is 16 × 16 × 58 nm3. The red and black dots represent Si and B atoms, respectively. From the reconstruction, it can be seen that, B atoms are homogeneously distributed in the SiNW core with a relatively high concentration: 1.4 ± 0.1 × 1020 B/cm3.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211335&req=5

Figure 2: Three-dimensional reconstruction of one part of p-type SiNW characterized by laser-assisted APT. The reconstruction volume is 16 × 16 × 58 nm3. The red and black dots represent Si and B atoms, respectively. From the reconstruction, it can be seen that, B atoms are homogeneously distributed in the SiNW core with a relatively high concentration: 1.4 ± 0.1 × 1020 B/cm3.
Mentions: The p-doped SiNW is also characterized by laser-assisted APT. We chose diborane as the p-type dopant reactant, and Au and silane as the catalyst and the Si precursor, respectively. The growth temperature and the time of SiNW are fixed as 500°C and 30 min, respectively. Silane is diluted with hydrogen in a ratio of 50:49, and the flow rate of diborane is 1 sccm. Figure 2 represents the 3 D reconstruction of a p-type SiNW investigated by APT. The reconstruction volume is 16 × 16 × 58 nm3. The red and black dots represent Si and B atoms, respectively. The B concentration is 1.4 ± 0.1 × 1020 B/cm3. It can be seen from Figure 2 that B atoms are homogeneously distributed in the core of the SiNW with a relatively high doping concentration.

Bottom Line: Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant.The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed.Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.

No MeSH data available.