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Atomic scale investigation of silicon nanowires and nanoclusters.

Roussel M, Chen W, Talbot E, Lardé R, Cadel E, Gourbilleau F, Grandidier B, Stiévenard D, Pareige P - Nanoscale Res Lett (2011)

Bottom Line: Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant.The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed.Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.

No MeSH data available.


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Laser-assisted APT investigation of gold atoms in SiNWs. (a) SEM image of an individual SiNW. The gold droplet is clearly detected at the top end of SiNW. (b) A slice of the 3 D reconstruction volume of one part of SiNW characterized by the laser-assisted APT. Each dot represents one atom in the reconstruction volume. Si and Au atoms are represented by red and yellow dots, respectively. The slice surface is 32 × 130 nm2. (c,d) Mass spectra of two regions in SiNW: top end and interior (the dashed box in b) of SiNW. The Au+ peak can be clearly detected in mass spectrum at the top end region of SiNW.
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Figure 1: Laser-assisted APT investigation of gold atoms in SiNWs. (a) SEM image of an individual SiNW. The gold droplet is clearly detected at the top end of SiNW. (b) A slice of the 3 D reconstruction volume of one part of SiNW characterized by the laser-assisted APT. Each dot represents one atom in the reconstruction volume. Si and Au atoms are represented by red and yellow dots, respectively. The slice surface is 32 × 130 nm2. (c,d) Mass spectra of two regions in SiNW: top end and interior (the dashed box in b) of SiNW. The Au+ peak can be clearly detected in mass spectrum at the top end region of SiNW.

Mentions: The detection of Au atoms in SiNWs has been first performed in intrinsic SiNW. The catalyst, gold droplet, is prepared using evaporation of gold atoms on a Si substrate. The growth temperature and time are 500°C and 30 min. respectively. Silane is diluted with hydrogen in the ratio of 50:49. The flow rate is 50 standard cubic centimeter per minute (sccm), and the silane partial pressure is kept at 0.4 mbar during SiNW growth. The diameter of Au droplets is controlled to be less than 100 nm to allow the morphology of SiNWs being adapted to APT investigation without any post treatment such as FIB milling. A single SiNW is presented in Figure 1a. The Au droplet can be seen on the top end of the SiNW. Figure 1b shows a slice of the 3 D reconstruction of a part of the SiNW. The surface of the slice is 32 × 130 nm2. Each dot in the reconstruction volume is one atom. Red and yellow dots represent Si and Au atoms, respectively. As indicated in Figure 1b, Au atoms are mainly detected in the droplet located on the top end of SiNW, and very few Au atoms are detected within the SiNW. To be more precise, the signal (mass pick) associated to gold atom in the SiNW does not emerge from the background noise of the experimental mass spectrum. In other words, if gold is present in the SiNW, the atomic level is below 5 ± 0.5 × 1017 at./cm3. The mass-to-charge ratio spectra of SiNW investigated by APT is presented in Figure 1c, d for the top end and the core region respectively.


Atomic scale investigation of silicon nanowires and nanoclusters.

Roussel M, Chen W, Talbot E, Lardé R, Cadel E, Gourbilleau F, Grandidier B, Stiévenard D, Pareige P - Nanoscale Res Lett (2011)

Laser-assisted APT investigation of gold atoms in SiNWs. (a) SEM image of an individual SiNW. The gold droplet is clearly detected at the top end of SiNW. (b) A slice of the 3 D reconstruction volume of one part of SiNW characterized by the laser-assisted APT. Each dot represents one atom in the reconstruction volume. Si and Au atoms are represented by red and yellow dots, respectively. The slice surface is 32 × 130 nm2. (c,d) Mass spectra of two regions in SiNW: top end and interior (the dashed box in b) of SiNW. The Au+ peak can be clearly detected in mass spectrum at the top end region of SiNW.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211335&req=5

Figure 1: Laser-assisted APT investigation of gold atoms in SiNWs. (a) SEM image of an individual SiNW. The gold droplet is clearly detected at the top end of SiNW. (b) A slice of the 3 D reconstruction volume of one part of SiNW characterized by the laser-assisted APT. Each dot represents one atom in the reconstruction volume. Si and Au atoms are represented by red and yellow dots, respectively. The slice surface is 32 × 130 nm2. (c,d) Mass spectra of two regions in SiNW: top end and interior (the dashed box in b) of SiNW. The Au+ peak can be clearly detected in mass spectrum at the top end region of SiNW.
Mentions: The detection of Au atoms in SiNWs has been first performed in intrinsic SiNW. The catalyst, gold droplet, is prepared using evaporation of gold atoms on a Si substrate. The growth temperature and time are 500°C and 30 min. respectively. Silane is diluted with hydrogen in the ratio of 50:49. The flow rate is 50 standard cubic centimeter per minute (sccm), and the silane partial pressure is kept at 0.4 mbar during SiNW growth. The diameter of Au droplets is controlled to be less than 100 nm to allow the morphology of SiNWs being adapted to APT investigation without any post treatment such as FIB milling. A single SiNW is presented in Figure 1a. The Au droplet can be seen on the top end of the SiNW. Figure 1b shows a slice of the 3 D reconstruction of a part of the SiNW. The surface of the slice is 32 × 130 nm2. Each dot in the reconstruction volume is one atom. Red and yellow dots represent Si and Au atoms, respectively. As indicated in Figure 1b, Au atoms are mainly detected in the droplet located on the top end of SiNW, and very few Au atoms are detected within the SiNW. To be more precise, the signal (mass pick) associated to gold atom in the SiNW does not emerge from the background noise of the experimental mass spectrum. In other words, if gold is present in the SiNW, the atomic level is below 5 ± 0.5 × 1017 at./cm3. The mass-to-charge ratio spectra of SiNW investigated by APT is presented in Figure 1c, d for the top end and the core region respectively.

Bottom Line: Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant.The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed.Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.

No MeSH data available.


Related in: MedlinePlus