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Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide.

Ahn JJ, Jo YD, Kim SC, Lee JH, Koo SM - Nanoscale Res Lett (2011)

Bottom Line: It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2).Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm.In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Electronics and Information, Kwangwoon University, Seoul 139-701, Korea. smkoo@kw.ac.kr.

ABSTRACT
The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

No MeSH data available.


AFM images and cross-sectional curves of oxide lines on c-plane 4H-SiC obtained under different scan speeds: (a) 8.376 μm/s; (b) 5.235 μm/s; (c) 2.094 μm/s; and (d) 1.047 μm/s.
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Figure 4: AFM images and cross-sectional curves of oxide lines on c-plane 4H-SiC obtained under different scan speeds: (a) 8.376 μm/s; (b) 5.235 μm/s; (c) 2.094 μm/s; and (d) 1.047 μm/s.

Mentions: Then, the effect of the scan speed on the different crystalline plane orientations was investigated The AFM-LO was performed on a-, c-, and m-plane 4H-SiC wafers with an applied voltage of 10 V (tip as a cathode) under different scan speeds of 8.376, 5.235, 2.094, and 1.047 μm/s. Figure 4 presents typical AFM topography images of the four sets of oxide lines obtained by AFM-LO on a c-plane 4H-SiC wafer. The oxide height profile of Figure 3 shows that the local oxidation is enhanced by decreasing the scan speed. As shown in Figure 4a, d, a lower scan speed (1.047 μm/s) favors oxide line formation (17.17 nm), while a higher scan speed (8.376 μm/s) leads to depressed oxidation (3.34 nm). Figures 5 and 6 show the AFM topography images of the four sets of oxide lines obtained by AFM-LO on a- and m-plane 4H-SiC wafers, respectively. The AFM-LO as a function of scan speed on a- and m-plane 4H-SiC is similar to that of scan speed on c-plane 4H-SiC. The local oxidation on a-plane 4H-SiC is also improved by lowering the scan speed, although the tendency for this is minimized. In the case of a lower scan speed (1.047 μm/s), the oxide height increases (3.33 nm), while a higher scan speed (8.376 μm/s) leads to a lower oxide height (1.41 nm), as shown in Figure 5a, d, respectively. Figure 6a shows an oxide line pattern having an oxide height of 4.08 nm with a lower scan speed (1.047 μm/s). The higher scan speed (8.376 μm/s) leads to a lower oxide height (0.79 nm), as shown in Figure 6d. The AFM-LO is improved by the lower scan speed, which causes the duration of the applied voltage to be longer [17].


Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide.

Ahn JJ, Jo YD, Kim SC, Lee JH, Koo SM - Nanoscale Res Lett (2011)

AFM images and cross-sectional curves of oxide lines on c-plane 4H-SiC obtained under different scan speeds: (a) 8.376 μm/s; (b) 5.235 μm/s; (c) 2.094 μm/s; and (d) 1.047 μm/s.
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Related In: Results  -  Collection

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Figure 4: AFM images and cross-sectional curves of oxide lines on c-plane 4H-SiC obtained under different scan speeds: (a) 8.376 μm/s; (b) 5.235 μm/s; (c) 2.094 μm/s; and (d) 1.047 μm/s.
Mentions: Then, the effect of the scan speed on the different crystalline plane orientations was investigated The AFM-LO was performed on a-, c-, and m-plane 4H-SiC wafers with an applied voltage of 10 V (tip as a cathode) under different scan speeds of 8.376, 5.235, 2.094, and 1.047 μm/s. Figure 4 presents typical AFM topography images of the four sets of oxide lines obtained by AFM-LO on a c-plane 4H-SiC wafer. The oxide height profile of Figure 3 shows that the local oxidation is enhanced by decreasing the scan speed. As shown in Figure 4a, d, a lower scan speed (1.047 μm/s) favors oxide line formation (17.17 nm), while a higher scan speed (8.376 μm/s) leads to depressed oxidation (3.34 nm). Figures 5 and 6 show the AFM topography images of the four sets of oxide lines obtained by AFM-LO on a- and m-plane 4H-SiC wafers, respectively. The AFM-LO as a function of scan speed on a- and m-plane 4H-SiC is similar to that of scan speed on c-plane 4H-SiC. The local oxidation on a-plane 4H-SiC is also improved by lowering the scan speed, although the tendency for this is minimized. In the case of a lower scan speed (1.047 μm/s), the oxide height increases (3.33 nm), while a higher scan speed (8.376 μm/s) leads to a lower oxide height (1.41 nm), as shown in Figure 5a, d, respectively. Figure 6a shows an oxide line pattern having an oxide height of 4.08 nm with a lower scan speed (1.047 μm/s). The higher scan speed (8.376 μm/s) leads to a lower oxide height (0.79 nm), as shown in Figure 6d. The AFM-LO is improved by the lower scan speed, which causes the duration of the applied voltage to be longer [17].

Bottom Line: It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2).Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm.In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Electronics and Information, Kwangwoon University, Seoul 139-701, Korea. smkoo@kw.ac.kr.

ABSTRACT
The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

No MeSH data available.