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Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide.

Ahn JJ, Jo YD, Kim SC, Lee JH, Koo SM - Nanoscale Res Lett (2011)

Bottom Line: It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2).Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm.In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

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Affiliation: School of Electronics and Information, Kwangwoon University, Seoul 139-701, Korea. smkoo@kw.ac.kr.

ABSTRACT
The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

No MeSH data available.


Variations in AFM-LO oxide height with different loading forces and applied voltages.
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Figure 3: Variations in AFM-LO oxide height with different loading forces and applied voltages.

Mentions: The maximum electric field is located on the tip-contacted surface, and the electric field increases when the doping concentration of the substrates increases, as shown in Figure 2. The electric field enhances the transport of oxyanions (OH-, O2-) [2], and also the bias direction affects the OH- diffusion across the oxide layer [8]. The variation in oxide height can also be affected by the magnitude of loading force and applied voltage values. Figure 3 represents that the oxide patterns are formed over the LF of 100 nN at an applied voltage of 6 V. The local oxidation rates increase with increasing applied voltages because of the wider effective contact area and higher electric field.


Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide.

Ahn JJ, Jo YD, Kim SC, Lee JH, Koo SM - Nanoscale Res Lett (2011)

Variations in AFM-LO oxide height with different loading forces and applied voltages.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211294&req=5

Figure 3: Variations in AFM-LO oxide height with different loading forces and applied voltages.
Mentions: The maximum electric field is located on the tip-contacted surface, and the electric field increases when the doping concentration of the substrates increases, as shown in Figure 2. The electric field enhances the transport of oxyanions (OH-, O2-) [2], and also the bias direction affects the OH- diffusion across the oxide layer [8]. The variation in oxide height can also be affected by the magnitude of loading force and applied voltage values. Figure 3 represents that the oxide patterns are formed over the LF of 100 nN at an applied voltage of 6 V. The local oxidation rates increase with increasing applied voltages because of the wider effective contact area and higher electric field.

Bottom Line: It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2).Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm.In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Electronics and Information, Kwangwoon University, Seoul 139-701, Korea. smkoo@kw.ac.kr.

ABSTRACT
The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

No MeSH data available.