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Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide.

Ahn JJ, Jo YD, Kim SC, Lee JH, Koo SM - Nanoscale Res Lett (2011)

Bottom Line: It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2).Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm.In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Electronics and Information, Kwangwoon University, Seoul 139-701, Korea. smkoo@kw.ac.kr.

ABSTRACT
The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

No MeSH data available.


The crystal structures of c-, a-, and m-planes on 4H-SiC substrates from left to right.
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Figure 1: The crystal structures of c-, a-, and m-planes on 4H-SiC substrates from left to right.

Mentions: In recent years, atomic force microscopy-based local oxidation lithography (AFM-LO) techniques have been receiving increasing attention as attractive, emerging lithography techniques for fabrication of nano-scale patterns and related device structures [5-7]. Although electron beam and nano-imprint lithography techniques have been widely studied, there are issues with regard to the damage to structures caused by high-energy electron beams or high imprinting temperatures [8]. On the other hand, AFM-LO can be used as a standard method for the fabrication as well as the characterization of nanostructures and electronic devices, particularly in silicon, since silicon oxides are indispensably used as gate dielectrics, insulation/passivation, and masks. So far, there have been many studies reporting on AFM-LO in various materials [5,9-11]. However, there have been few published studies on AFM-LO of different crystalline planes (a-, c-, and m-planes) of SiC. The enhanced AFM-LO of 4H-SiC at room temperature without heating, chemicals, or photo-illumination has been observed [12]. In this study, the effect of crystalline plane orientations of SiC (a-, m-, and c-planes) on the AFM-LO of SiC was investigated. We compared the rates of AFM-LO and thermal oxidation of horizontal crystalline plane orientations (a- and m-planes) with those of perpendicular crystalline plane orientation (c-plane) to the c-axis in 4H-SiC. Figure 1 shows the crystal structures of the c-, a-, and m-planes on 4H-SiC substrates from left to right, respectively [13].


Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide.

Ahn JJ, Jo YD, Kim SC, Lee JH, Koo SM - Nanoscale Res Lett (2011)

The crystal structures of c-, a-, and m-planes on 4H-SiC substrates from left to right.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211294&req=5

Figure 1: The crystal structures of c-, a-, and m-planes on 4H-SiC substrates from left to right.
Mentions: In recent years, atomic force microscopy-based local oxidation lithography (AFM-LO) techniques have been receiving increasing attention as attractive, emerging lithography techniques for fabrication of nano-scale patterns and related device structures [5-7]. Although electron beam and nano-imprint lithography techniques have been widely studied, there are issues with regard to the damage to structures caused by high-energy electron beams or high imprinting temperatures [8]. On the other hand, AFM-LO can be used as a standard method for the fabrication as well as the characterization of nanostructures and electronic devices, particularly in silicon, since silicon oxides are indispensably used as gate dielectrics, insulation/passivation, and masks. So far, there have been many studies reporting on AFM-LO in various materials [5,9-11]. However, there have been few published studies on AFM-LO of different crystalline planes (a-, c-, and m-planes) of SiC. The enhanced AFM-LO of 4H-SiC at room temperature without heating, chemicals, or photo-illumination has been observed [12]. In this study, the effect of crystalline plane orientations of SiC (a-, m-, and c-planes) on the AFM-LO of SiC was investigated. We compared the rates of AFM-LO and thermal oxidation of horizontal crystalline plane orientations (a- and m-planes) with those of perpendicular crystalline plane orientation (c-plane) to the c-axis in 4H-SiC. Figure 1 shows the crystal structures of the c-, a-, and m-planes on 4H-SiC substrates from left to right, respectively [13].

Bottom Line: It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2).Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm.In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Electronics and Information, Kwangwoon University, Seoul 139-701, Korea. smkoo@kw.ac.kr.

ABSTRACT
The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

No MeSH data available.