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Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides.

Ray SK, Das S, Singha RK, Manna S, Dhar A - Nanoscale Res Lett (2011)

Bottom Line: The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented.The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented.The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics and Meteorology, Indian Institute of Technology Kharagpur 721302, India. physkr@phy.iitkgp.ernet.in.

ABSTRACT
The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

No MeSH data available.


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High-frequency (100 kHz) C-V characteristics of MOS capacitor with Ge nanocrystals embedded in high-k (a) Al2O3 and (b) HfO2 matrix.
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Figure 7: High-frequency (100 kHz) C-V characteristics of MOS capacitor with Ge nanocrystals embedded in high-k (a) Al2O3 and (b) HfO2 matrix.

Mentions: Figure 7a, b represents the high-frequency (100 kHz) capacitance-voltage (C-V) hysteresis behavior of the MOS structures fabricated using Ge nanocrystals embedded in Al2O3 and HfO2 matrix, respectively, for a voltage sweep of ± 7.5 V. A negligibly small flat-band voltage shift of 0.15 and 0.18 V is observed for Al2O3 and HfO2 MOS devices without Ge NCs. However, a large memory window of 1.20, 6.32, 1.85, and 2.38 V is observed for the A-800, A-900, F-800, and F-900 samples, respectively. From the maximum flat-band voltage shift of the C-V curves, we have calculated the stored charge density using the following equation [23](4)


Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides.

Ray SK, Das S, Singha RK, Manna S, Dhar A - Nanoscale Res Lett (2011)

High-frequency (100 kHz) C-V characteristics of MOS capacitor with Ge nanocrystals embedded in high-k (a) Al2O3 and (b) HfO2 matrix.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211282&req=5

Figure 7: High-frequency (100 kHz) C-V characteristics of MOS capacitor with Ge nanocrystals embedded in high-k (a) Al2O3 and (b) HfO2 matrix.
Mentions: Figure 7a, b represents the high-frequency (100 kHz) capacitance-voltage (C-V) hysteresis behavior of the MOS structures fabricated using Ge nanocrystals embedded in Al2O3 and HfO2 matrix, respectively, for a voltage sweep of ± 7.5 V. A negligibly small flat-band voltage shift of 0.15 and 0.18 V is observed for Al2O3 and HfO2 MOS devices without Ge NCs. However, a large memory window of 1.20, 6.32, 1.85, and 2.38 V is observed for the A-800, A-900, F-800, and F-900 samples, respectively. From the maximum flat-band voltage shift of the C-V curves, we have calculated the stored charge density using the following equation [23](4)

Bottom Line: The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented.The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented.The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics and Meteorology, Indian Institute of Technology Kharagpur 721302, India. physkr@phy.iitkgp.ernet.in.

ABSTRACT
The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

No MeSH data available.


Related in: MedlinePlus