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Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED.

Arapkina LV, Yuryev VA, Chizh KV, Shevlyuga VM, Storojevyh MS, Krylova LA - Nanoscale Res Lett (2011)

Bottom Line: A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced.A model of the c(8 × 8) structure formation has been built on the basis of the STM data.Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg.

View Article: PubMed Central - HTML - PubMed

Affiliation: A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, Moscow, 119991, Russia. arapkina@kapella.gpi.ru.

ABSTRACT
The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing. The reconstruction was observed to be reversible: the (4 × 4) structure turned into the (2 × 1) one at T ≳ 600°C, the (4 × 4) structure appeared again at recurring cooling. The c(8 × 8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced. The (2 × 1) structure was observed on the surface free of the c(8 × 8) one. The c(8 × 8) structure has been evidenced to manifest itself as the (4 × 4) one in the RHEED patterns. A model of the c(8 × 8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg.

No MeSH data available.


STM empty-state images of the Si(001) surface: a c(8 × 8) unit cell is marked by the white box in image (a) (+1.9 V, 50 pA), distances between the rows marked by 'A' and 'B' equal 3a and 4a (which correspond to c(8 × 6) and c(8 × 8) structures, respectively), two long "rectangles" and divacancies arising in the adjacent rows are marked by 'L' and 'V', respectively; a row wedging between two rows ('W') and lost blocks ('LB') are seen in (b) (+1.6 V, 100 pA).
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Figure 7: STM empty-state images of the Si(001) surface: a c(8 × 8) unit cell is marked by the white box in image (a) (+1.9 V, 50 pA), distances between the rows marked by 'A' and 'B' equal 3a and 4a (which correspond to c(8 × 6) and c(8 × 8) structures, respectively), two long "rectangles" and divacancies arising in the adjacent rows are marked by 'L' and 'V', respectively; a row wedging between two rows ('W') and lost blocks ('LB') are seen in (b) (+1.6 V, 100 pA).

Mentions: Figure 7 shows the magnified images of the investigated surface. The rows of the blocks are seen to be situated at varying distances from one another (hereinafter, the distances are measured between corresponding maxima of features). A unit c(8 × 8) cell is marked with a square box in Figure 7a. The distances between the adjacent rows of the rectangles are 4a in such structures ('B' in Figure 7a). The adjacent rows designated as 'A' are 3a apart (c(8 × 6)).


Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED.

Arapkina LV, Yuryev VA, Chizh KV, Shevlyuga VM, Storojevyh MS, Krylova LA - Nanoscale Res Lett (2011)

STM empty-state images of the Si(001) surface: a c(8 × 8) unit cell is marked by the white box in image (a) (+1.9 V, 50 pA), distances between the rows marked by 'A' and 'B' equal 3a and 4a (which correspond to c(8 × 6) and c(8 × 8) structures, respectively), two long "rectangles" and divacancies arising in the adjacent rows are marked by 'L' and 'V', respectively; a row wedging between two rows ('W') and lost blocks ('LB') are seen in (b) (+1.6 V, 100 pA).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211275&req=5

Figure 7: STM empty-state images of the Si(001) surface: a c(8 × 8) unit cell is marked by the white box in image (a) (+1.9 V, 50 pA), distances between the rows marked by 'A' and 'B' equal 3a and 4a (which correspond to c(8 × 6) and c(8 × 8) structures, respectively), two long "rectangles" and divacancies arising in the adjacent rows are marked by 'L' and 'V', respectively; a row wedging between two rows ('W') and lost blocks ('LB') are seen in (b) (+1.6 V, 100 pA).
Mentions: Figure 7 shows the magnified images of the investigated surface. The rows of the blocks are seen to be situated at varying distances from one another (hereinafter, the distances are measured between corresponding maxima of features). A unit c(8 × 8) cell is marked with a square box in Figure 7a. The distances between the adjacent rows of the rectangles are 4a in such structures ('B' in Figure 7a). The adjacent rows designated as 'A' are 3a apart (c(8 × 6)).

Bottom Line: A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced.A model of the c(8 × 8) structure formation has been built on the basis of the STM data.Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg.

View Article: PubMed Central - HTML - PubMed

Affiliation: A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, Moscow, 119991, Russia. arapkina@kapella.gpi.ru.

ABSTRACT
The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing. The reconstruction was observed to be reversible: the (4 × 4) structure turned into the (2 × 1) one at T ≳ 600°C, the (4 × 4) structure appeared again at recurring cooling. The c(8 × 8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced. The (2 × 1) structure was observed on the surface free of the c(8 × 8) one. The c(8 × 8) structure has been evidenced to manifest itself as the (4 × 4) one in the RHEED patterns. A model of the c(8 × 8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg.

No MeSH data available.