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Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED.

Arapkina LV, Yuryev VA, Chizh KV, Shevlyuga VM, Storojevyh MS, Krylova LA - Nanoscale Res Lett (2011)

Bottom Line: A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced.A model of the c(8 × 8) structure formation has been built on the basis of the STM data.Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg.

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Affiliation: A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, Moscow, 119991, Russia. arapkina@kapella.gpi.ru.

ABSTRACT
The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing. The reconstruction was observed to be reversible: the (4 × 4) structure turned into the (2 × 1) one at T ≳ 600°C, the (4 × 4) structure appeared again at recurring cooling. The c(8 × 8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced. The (2 × 1) structure was observed on the surface free of the c(8 × 8) one. The c(8 × 8) structure has been evidenced to manifest itself as the (4 × 4) one in the RHEED patterns. A model of the c(8 × 8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg.

No MeSH data available.


STM images and line scans of the same region on the Si(001) surface: (a) empty states (+1.7 V, 100 pA) and (b) filled states (-2.0 V, 100 pA); positions of extremes of line scan profiles (c) match exactly for the empty- (1) and filled-state (2) distributions along the corresponding lines in the images (a) and (b).
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Figure 3: STM images and line scans of the same region on the Si(001) surface: (a) empty states (+1.7 V, 100 pA) and (b) filled states (-2.0 V, 100 pA); positions of extremes of line scan profiles (c) match exactly for the empty- (1) and filled-state (2) distributions along the corresponding lines in the images (a) and (b).

Mentions: Figure 3 demonstrates the empty- and filled-state images of the same surface region. Each block consists of two lines separated by a gap. This fine structure of blocks is clearly seen in the both pictures (a) and (b), but its images are different in different scanning modes. A characteristic property most clearly seen in the filled-state mode (Figure 3b) is the presence of the brightness maxima on both sides of the lines inside the blocks. These peculiar features are described later in more detail. Figure 3c shows the profiles of the images taken along the white lines. Extreme positions of both curves are well fitted. Relative heights of the features outside and inside the blocks can be estimated from the profiles.


Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED.

Arapkina LV, Yuryev VA, Chizh KV, Shevlyuga VM, Storojevyh MS, Krylova LA - Nanoscale Res Lett (2011)

STM images and line scans of the same region on the Si(001) surface: (a) empty states (+1.7 V, 100 pA) and (b) filled states (-2.0 V, 100 pA); positions of extremes of line scan profiles (c) match exactly for the empty- (1) and filled-state (2) distributions along the corresponding lines in the images (a) and (b).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211275&req=5

Figure 3: STM images and line scans of the same region on the Si(001) surface: (a) empty states (+1.7 V, 100 pA) and (b) filled states (-2.0 V, 100 pA); positions of extremes of line scan profiles (c) match exactly for the empty- (1) and filled-state (2) distributions along the corresponding lines in the images (a) and (b).
Mentions: Figure 3 demonstrates the empty- and filled-state images of the same surface region. Each block consists of two lines separated by a gap. This fine structure of blocks is clearly seen in the both pictures (a) and (b), but its images are different in different scanning modes. A characteristic property most clearly seen in the filled-state mode (Figure 3b) is the presence of the brightness maxima on both sides of the lines inside the blocks. These peculiar features are described later in more detail. Figure 3c shows the profiles of the images taken along the white lines. Extreme positions of both curves are well fitted. Relative heights of the features outside and inside the blocks can be estimated from the profiles.

Bottom Line: A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced.A model of the c(8 × 8) structure formation has been built on the basis of the STM data.Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg.

View Article: PubMed Central - HTML - PubMed

Affiliation: A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, Moscow, 119991, Russia. arapkina@kapella.gpi.ru.

ABSTRACT
The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing. The reconstruction was observed to be reversible: the (4 × 4) structure turned into the (2 × 1) one at T ≳ 600°C, the (4 × 4) structure appeared again at recurring cooling. The c(8 × 8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced. The (2 × 1) structure was observed on the surface free of the c(8 × 8) one. The c(8 × 8) structure has been evidenced to manifest itself as the (4 × 4) one in the RHEED patterns. A model of the c(8 × 8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg.

No MeSH data available.