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Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes.

Harazim SM, Feng P, Sanchez S, Deneke C, Mei Y, Schmidt OG - Nanoscale Res Lett (2011)

Bottom Line: Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs).Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels.The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany. s.harazim@ifw-dresden.de.

ABSTRACT
Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.

No MeSH data available.


Related in: MedlinePlus

Schematic diagram representing a cross section of one transistor device. The two reservoirs are mainly separated by the SU-8 photoresist barrier and are only connected by the nanochannel. The top PDMS lid seals the entire system and avoids rapid liquid evaporation. The electrodes are electrically isolated by an Al2O3 layer (bright blue).
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Figure 5: Schematic diagram representing a cross section of one transistor device. The two reservoirs are mainly separated by the SU-8 photoresist barrier and are only connected by the nanochannel. The top PDMS lid seals the entire system and avoids rapid liquid evaporation. The electrodes are electrically isolated by an Al2O3 layer (bright blue).

Mentions: The current chip structure includes three independent operating IFET devices. To prove the suitability of the presented IFET devices, a 10-4-M KCl solution had been added to reservoir 1 and 2 of each single device (see Figure 5). The source electrode was always grounded to VS = 0 V, whereas the drain electrode had a bias of either VD = +1 V (to attract the negative chloride ions) or VD = -1 V (to attract the positive potassium ions). The measurement of the ion current is a steady state measurement, meaning that no polarization effects disturb the detection of the ion current. In Figure 6a, four conductance curves are displayed to demonstrate the fast relaxation capabilities of the presented device. For VG = -1 V and VD = -1 V the conductance decayed fast below 5% of the initial value in the first 5 s. The measurement is displayed from 3 s on, whereas at 0 s the bias was already applied to the electrodes. The data point after 55 s of each curve represents the channel conductance without polarization effects. All ion current measurements were taken in the steady state after 55 s.


Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes.

Harazim SM, Feng P, Sanchez S, Deneke C, Mei Y, Schmidt OG - Nanoscale Res Lett (2011)

Schematic diagram representing a cross section of one transistor device. The two reservoirs are mainly separated by the SU-8 photoresist barrier and are only connected by the nanochannel. The top PDMS lid seals the entire system and avoids rapid liquid evaporation. The electrodes are electrically isolated by an Al2O3 layer (bright blue).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211272&req=5

Figure 5: Schematic diagram representing a cross section of one transistor device. The two reservoirs are mainly separated by the SU-8 photoresist barrier and are only connected by the nanochannel. The top PDMS lid seals the entire system and avoids rapid liquid evaporation. The electrodes are electrically isolated by an Al2O3 layer (bright blue).
Mentions: The current chip structure includes three independent operating IFET devices. To prove the suitability of the presented IFET devices, a 10-4-M KCl solution had been added to reservoir 1 and 2 of each single device (see Figure 5). The source electrode was always grounded to VS = 0 V, whereas the drain electrode had a bias of either VD = +1 V (to attract the negative chloride ions) or VD = -1 V (to attract the positive potassium ions). The measurement of the ion current is a steady state measurement, meaning that no polarization effects disturb the detection of the ion current. In Figure 6a, four conductance curves are displayed to demonstrate the fast relaxation capabilities of the presented device. For VG = -1 V and VD = -1 V the conductance decayed fast below 5% of the initial value in the first 5 s. The measurement is displayed from 3 s on, whereas at 0 s the bias was already applied to the electrodes. The data point after 55 s of each curve represents the channel conductance without polarization effects. All ion current measurements were taken in the steady state after 55 s.

Bottom Line: Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs).Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels.The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany. s.harazim@ifw-dresden.de.

ABSTRACT
Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.

No MeSH data available.


Related in: MedlinePlus