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Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes.

Harazim SM, Feng P, Sanchez S, Deneke C, Mei Y, Schmidt OG - Nanoscale Res Lett (2011)

Bottom Line: Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs).Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels.The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany. s.harazim@ifw-dresden.de.

ABSTRACT
Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.

No MeSH data available.


Related in: MedlinePlus

Sketch of the general wrinkling process in three steps. (a) Pre-defined wrinkling structure by photolithography and wet chemical processing, (b) selective HF etching of the sacrificial AlAs layer and starting release of the strained InGaAs layer, (c) bond back and wrinkling of the released functional InGaAs layer.
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Figure 1: Sketch of the general wrinkling process in three steps. (a) Pre-defined wrinkling structure by photolithography and wet chemical processing, (b) selective HF etching of the sacrificial AlAs layer and starting release of the strained InGaAs layer, (c) bond back and wrinkling of the released functional InGaAs layer.

Mentions: The basic substrate for wrinkling consists of a stack of three layers which was grown by molecular beam epitaxy (MBE) onto the GaAs substrate. First, a 200-nm thick GaAs film was grown as a buffer to provide a smooth and crystalline surface for the second 80-nm thick AlAs sacrificial layer. Finally, a 20-nm thick In0.2Ga0.8As functional layer was grown on top of the sacrificial layer. The fabricated stack of layers was processed into a square-shaped mesa structure with a lateral side length of 6 μm by photolithography and wet chemical etching as shown in Figure 1a. A diluted HF etchant selectively removes the AlAs sacrificial layer and released the InGaAs nanomembrane from the GaAs buffer (Figure 1b). Afterwards, due to the internal stress of the wrinkling layer, the InGaAs membrane began to bond back to the substrate and wrinkled into a straight channel-like structure (Figure 1c) [16,18].


Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes.

Harazim SM, Feng P, Sanchez S, Deneke C, Mei Y, Schmidt OG - Nanoscale Res Lett (2011)

Sketch of the general wrinkling process in three steps. (a) Pre-defined wrinkling structure by photolithography and wet chemical processing, (b) selective HF etching of the sacrificial AlAs layer and starting release of the strained InGaAs layer, (c) bond back and wrinkling of the released functional InGaAs layer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211272&req=5

Figure 1: Sketch of the general wrinkling process in three steps. (a) Pre-defined wrinkling structure by photolithography and wet chemical processing, (b) selective HF etching of the sacrificial AlAs layer and starting release of the strained InGaAs layer, (c) bond back and wrinkling of the released functional InGaAs layer.
Mentions: The basic substrate for wrinkling consists of a stack of three layers which was grown by molecular beam epitaxy (MBE) onto the GaAs substrate. First, a 200-nm thick GaAs film was grown as a buffer to provide a smooth and crystalline surface for the second 80-nm thick AlAs sacrificial layer. Finally, a 20-nm thick In0.2Ga0.8As functional layer was grown on top of the sacrificial layer. The fabricated stack of layers was processed into a square-shaped mesa structure with a lateral side length of 6 μm by photolithography and wet chemical etching as shown in Figure 1a. A diluted HF etchant selectively removes the AlAs sacrificial layer and released the InGaAs nanomembrane from the GaAs buffer (Figure 1b). Afterwards, due to the internal stress of the wrinkling layer, the InGaAs membrane began to bond back to the substrate and wrinkled into a straight channel-like structure (Figure 1c) [16,18].

Bottom Line: Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs).Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels.The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany. s.harazim@ifw-dresden.de.

ABSTRACT
Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.

No MeSH data available.


Related in: MedlinePlus