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Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth.

Helfrich M, Gröger R, Förste A, Litvinov D, Gerthsen D, Schimmel T, Schaadt DM - Nanoscale Res Lett (2011)

Bottom Line: Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth.Successive cleaning steps were analyzed and optimized.A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.

View Article: PubMed Central - HTML - PubMed

Affiliation: DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany. daniel.schaadt@kit.edu.

ABSTRACT
In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.

No MeSH data available.


Related in: MedlinePlus

AFM image of pre-structured GaAs (100) surface.
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Figure 1: AFM image of pre-structured GaAs (100) surface.

Mentions: Holes with diameters ranging from 50-70 nm are reproducibly defined by EBL and WCE as described above. Figure 1 depicts a pre-structured GaAs sample. The holes are arranged on a square grid with a separation of 500 nm. The representative linescan does not reveal the full depth since the AFM tip is too large to completely enter the hole. Previous calibration of the etch rate suggests a hole depth of about 30 nm for this particular sample.


Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth.

Helfrich M, Gröger R, Förste A, Litvinov D, Gerthsen D, Schimmel T, Schaadt DM - Nanoscale Res Lett (2011)

AFM image of pre-structured GaAs (100) surface.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211268&req=5

Figure 1: AFM image of pre-structured GaAs (100) surface.
Mentions: Holes with diameters ranging from 50-70 nm are reproducibly defined by EBL and WCE as described above. Figure 1 depicts a pre-structured GaAs sample. The holes are arranged on a square grid with a separation of 500 nm. The representative linescan does not reveal the full depth since the AFM tip is too large to completely enter the hole. Previous calibration of the etch rate suggests a hole depth of about 30 nm for this particular sample.

Bottom Line: Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth.Successive cleaning steps were analyzed and optimized.A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.

View Article: PubMed Central - HTML - PubMed

Affiliation: DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany. daniel.schaadt@kit.edu.

ABSTRACT
In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.

No MeSH data available.


Related in: MedlinePlus