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Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain.

Yu JL, Chen YH, Tang CG, Jiang C, Ye XL - Nanoscale Res Lett (2011)

Bottom Line: The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K.Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition.It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P,O, Box 912, Beijing 100083, People's Republic of China. yhchen@semi.ac.cn.

ABSTRACT
The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition. It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect. The effect of uniaxial strain on in-plane optical anisotropy (IPOA) is also investigated. The IPOA of the forbidden transition changes little with strain, while that of the allowed transition shows a linear dependence on strain.PACS 78.66.Fd, 78.20.Bh, 78.20.Fm.

No MeSH data available.


Related in: MedlinePlus

Calculated anisotropic transition probability ΔM of InxGa1-xAs/GaAs QW under different strain ϵxy in unit of e0 = 3.23 × 10-5. The oblique lines indicate the energy positions of the transitions 1e1hh, 1e2hh, and 1e1lh in the ΔM spectra.
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Figure 6: Calculated anisotropic transition probability ΔM of InxGa1-xAs/GaAs QW under different strain ϵxy in unit of e0 = 3.23 × 10-5. The oblique lines indicate the energy positions of the transitions 1e1hh, 1e2hh, and 1e1lh in the ΔM spectra.

Mentions: Using the parameters obtained above, we can well stimulate the IPOA of all the transitions under different uniaxial strain, as shown in Figure 6. The calculated transition energies are also well consistent with experiments, which is shown in Figure 4b.


Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain.

Yu JL, Chen YH, Tang CG, Jiang C, Ye XL - Nanoscale Res Lett (2011)

Calculated anisotropic transition probability ΔM of InxGa1-xAs/GaAs QW under different strain ϵxy in unit of e0 = 3.23 × 10-5. The oblique lines indicate the energy positions of the transitions 1e1hh, 1e2hh, and 1e1lh in the ΔM spectra.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211267&req=5

Figure 6: Calculated anisotropic transition probability ΔM of InxGa1-xAs/GaAs QW under different strain ϵxy in unit of e0 = 3.23 × 10-5. The oblique lines indicate the energy positions of the transitions 1e1hh, 1e2hh, and 1e1lh in the ΔM spectra.
Mentions: Using the parameters obtained above, we can well stimulate the IPOA of all the transitions under different uniaxial strain, as shown in Figure 6. The calculated transition energies are also well consistent with experiments, which is shown in Figure 4b.

Bottom Line: The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K.Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition.It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P,O, Box 912, Beijing 100083, People's Republic of China. yhchen@semi.ac.cn.

ABSTRACT
The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition. It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect. The effect of uniaxial strain on in-plane optical anisotropy (IPOA) is also investigated. The IPOA of the forbidden transition changes little with strain, while that of the allowed transition shows a linear dependence on strain.PACS 78.66.Fd, 78.20.Bh, 78.20.Fm.

No MeSH data available.


Related in: MedlinePlus