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Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain.

Yu JL, Chen YH, Tang CG, Jiang C, Ye XL - Nanoscale Res Lett (2011)

Bottom Line: The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K.Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition.It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P,O, Box 912, Beijing 100083, People's Republic of China. yhchen@semi.ac.cn.

ABSTRACT
The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition. It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect. The effect of uniaxial strain on in-plane optical anisotropy (IPOA) is also investigated. The IPOA of the forbidden transition changes little with strain, while that of the allowed transition shows a linear dependence on strain.PACS 78.66.Fd, 78.20.Bh, 78.20.Fm.

No MeSH data available.


Related in: MedlinePlus

Strain dependence of RD intensity and energies of 1e1hh, 1e2hh and 1e1lh. (a) RD intensity of the transitions 1e1hh (squares), 1e2hh (circles) and 1e1lh (triangles) vs. strain after subtracting the RD contribution under zero strain. The solid lines are the linear fitting of the experimental data. (b) The transition energies vs. strain. The solid lines in (b) are calculated from the envelope function theory (1e0 = 3.23 × 10-5)
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Figure 4: Strain dependence of RD intensity and energies of 1e1hh, 1e2hh and 1e1lh. (a) RD intensity of the transitions 1e1hh (squares), 1e2hh (circles) and 1e1lh (triangles) vs. strain after subtracting the RD contribution under zero strain. The solid lines are the linear fitting of the experimental data. (b) The transition energies vs. strain. The solid lines in (b) are calculated from the envelope function theory (1e0 = 3.23 × 10-5)

Mentions: Figure 3 shows the imaginary part of RD spectra of the sample with 5 nm well width under different strain. Although the signal-to-noise ratio at room temperate is not as good as that at 80 K, three structures can still be clearly observed in the vicinity of 1.30, 1.34 and 1.36 eV, which can be assigned to the transitions of 1e1hh, 1e2hh and 1e1lh, respectively. Figure 4a shows us the RD intensity of the transition 1e1hh, 1e2hh and 1e1lh vs. strain, after subtracting the RD contribution under zero strain. It can be seen that, as the strain increases, the RD intensity of the allowed transition 1e1hh and 1e1lh are enhanced, while that of the forbidden transition 1e2hh does not show apparent change. Besides, in contrast to the transition 1e2hh and 1e1lh, the sign of the anisotropic transition 1e1hh changes as the strain increases. In addiction, slight redshifts can be introduced by the strain for all transitions, as shown in Figure 4b. The energy shift caused by J0 = 0.07 (i.e., ϵxy = 7e0 = 2.3 × 10-4) is less than 9 meV.


Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain.

Yu JL, Chen YH, Tang CG, Jiang C, Ye XL - Nanoscale Res Lett (2011)

Strain dependence of RD intensity and energies of 1e1hh, 1e2hh and 1e1lh. (a) RD intensity of the transitions 1e1hh (squares), 1e2hh (circles) and 1e1lh (triangles) vs. strain after subtracting the RD contribution under zero strain. The solid lines are the linear fitting of the experimental data. (b) The transition energies vs. strain. The solid lines in (b) are calculated from the envelope function theory (1e0 = 3.23 × 10-5)
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211267&req=5

Figure 4: Strain dependence of RD intensity and energies of 1e1hh, 1e2hh and 1e1lh. (a) RD intensity of the transitions 1e1hh (squares), 1e2hh (circles) and 1e1lh (triangles) vs. strain after subtracting the RD contribution under zero strain. The solid lines are the linear fitting of the experimental data. (b) The transition energies vs. strain. The solid lines in (b) are calculated from the envelope function theory (1e0 = 3.23 × 10-5)
Mentions: Figure 3 shows the imaginary part of RD spectra of the sample with 5 nm well width under different strain. Although the signal-to-noise ratio at room temperate is not as good as that at 80 K, three structures can still be clearly observed in the vicinity of 1.30, 1.34 and 1.36 eV, which can be assigned to the transitions of 1e1hh, 1e2hh and 1e1lh, respectively. Figure 4a shows us the RD intensity of the transition 1e1hh, 1e2hh and 1e1lh vs. strain, after subtracting the RD contribution under zero strain. It can be seen that, as the strain increases, the RD intensity of the allowed transition 1e1hh and 1e1lh are enhanced, while that of the forbidden transition 1e2hh does not show apparent change. Besides, in contrast to the transition 1e2hh and 1e1lh, the sign of the anisotropic transition 1e1hh changes as the strain increases. In addiction, slight redshifts can be introduced by the strain for all transitions, as shown in Figure 4b. The energy shift caused by J0 = 0.07 (i.e., ϵxy = 7e0 = 2.3 × 10-4) is less than 9 meV.

Bottom Line: The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K.Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition.It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P,O, Box 912, Beijing 100083, People's Republic of China. yhchen@semi.ac.cn.

ABSTRACT
The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition. It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect. The effect of uniaxial strain on in-plane optical anisotropy (IPOA) is also investigated. The IPOA of the forbidden transition changes little with strain, while that of the allowed transition shows a linear dependence on strain.PACS 78.66.Fd, 78.20.Bh, 78.20.Fm.

No MeSH data available.


Related in: MedlinePlus