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Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers

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ABSTRACT

Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.

No MeSH data available.


Two-dimensional slice of the calculated using nextnano3 software conduction band structure of B45 sample.
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Figure 7: Two-dimensional slice of the calculated using nextnano3 software conduction band structure of B45 sample.

Mentions: The height of potential barriers for electrons located in interdot area is defined as the difference between the maximum of the conduction band in QDs and minimum in the depletion regions that occur as a result of interdot doping, as it is shown in Figure 7.


Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers
Two-dimensional slice of the calculated using nextnano3 software conduction band structure of B45 sample.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211266&req=5

Figure 7: Two-dimensional slice of the calculated using nextnano3 software conduction band structure of B45 sample.
Mentions: The height of potential barriers for electrons located in interdot area is defined as the difference between the maximum of the conduction band in QDs and minimum in the depletion regions that occur as a result of interdot doping, as it is shown in Figure 7.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.

No MeSH data available.