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Microscopic study of electrical properties of CrSi2 nanocrystals in silicon.

Dózsa L, Lányi S, Raineri V, Giannazzo F, Galkin NG - Nanoscale Res Lett (2011)

Bottom Line: Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface.The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface.SCM has revealed NCs deep below the surface not seen by AFM.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Science, P, O, Box 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface. The electrical characteristics were investigated in Schottky junctions by current-voltage and capacitance-voltage measurements. Atomic force microscopy (AFM), conductive AFM and scanning probe capacitance microscopy (SCM) were applied to reveal morphology and local electrical properties. The scanning probe methods yielded specific information, and tapping-mode AFM has shown up to 13-nm-high large-area protrusions not seen in the contact-mode AFM. The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface. SCM has revealed NCs deep below the surface not seen by AFM. The electrically active probe yielded significantly better spatial resolution than AFM. The conductive AFM measurements have shown that the Cr-related point defects near the surface are responsible for the leakage of the macroscopic Schottky junctions, and also that NCs near the surface are sensitive to the mechanical and electrical stress induced by the scanning probe.

No MeSH data available.


Related in: MedlinePlus

Contact-mode scanning probe images of a 1 μm × 1 μm area on the sample with NCs near the surface. (a). AFM amplitude image. (b). SCM image of the same area.
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Figure 5: Contact-mode scanning probe images of a 1 μm × 1 μm area on the sample with NCs near the surface. (a). AFM amplitude image. (b). SCM image of the same area.

Mentions: The contact-mode AFM amplitude and SCM images recorded simultaneously in sample with redistributed NCs are shown in Figure 5a,b, respectively. The SCM shows definitely better contrast and spatial resolution than AFM, indicating that the detection of NCs is improved when electrical interaction is involved in the image. The size of the observed objects is appropriate for NC sizes seen earlier in XTEM and in AFM images [6,8].


Microscopic study of electrical properties of CrSi2 nanocrystals in silicon.

Dózsa L, Lányi S, Raineri V, Giannazzo F, Galkin NG - Nanoscale Res Lett (2011)

Contact-mode scanning probe images of a 1 μm × 1 μm area on the sample with NCs near the surface. (a). AFM amplitude image. (b). SCM image of the same area.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211265&req=5

Figure 5: Contact-mode scanning probe images of a 1 μm × 1 μm area on the sample with NCs near the surface. (a). AFM amplitude image. (b). SCM image of the same area.
Mentions: The contact-mode AFM amplitude and SCM images recorded simultaneously in sample with redistributed NCs are shown in Figure 5a,b, respectively. The SCM shows definitely better contrast and spatial resolution than AFM, indicating that the detection of NCs is improved when electrical interaction is involved in the image. The size of the observed objects is appropriate for NC sizes seen earlier in XTEM and in AFM images [6,8].

Bottom Line: Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface.The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface.SCM has revealed NCs deep below the surface not seen by AFM.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Science, P, O, Box 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface. The electrical characteristics were investigated in Schottky junctions by current-voltage and capacitance-voltage measurements. Atomic force microscopy (AFM), conductive AFM and scanning probe capacitance microscopy (SCM) were applied to reveal morphology and local electrical properties. The scanning probe methods yielded specific information, and tapping-mode AFM has shown up to 13-nm-high large-area protrusions not seen in the contact-mode AFM. The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface. SCM has revealed NCs deep below the surface not seen by AFM. The electrically active probe yielded significantly better spatial resolution than AFM. The conductive AFM measurements have shown that the Cr-related point defects near the surface are responsible for the leakage of the macroscopic Schottky junctions, and also that NCs near the surface are sensitive to the mechanical and electrical stress induced by the scanning probe.

No MeSH data available.


Related in: MedlinePlus