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Microscopic study of electrical properties of CrSi2 nanocrystals in silicon.

Dózsa L, Lányi S, Raineri V, Giannazzo F, Galkin NG - Nanoscale Res Lett (2011)

Bottom Line: Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface.The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface.SCM has revealed NCs deep below the surface not seen by AFM.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Science, P, O, Box 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface. The electrical characteristics were investigated in Schottky junctions by current-voltage and capacitance-voltage measurements. Atomic force microscopy (AFM), conductive AFM and scanning probe capacitance microscopy (SCM) were applied to reveal morphology and local electrical properties. The scanning probe methods yielded specific information, and tapping-mode AFM has shown up to 13-nm-high large-area protrusions not seen in the contact-mode AFM. The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface. SCM has revealed NCs deep below the surface not seen by AFM. The electrically active probe yielded significantly better spatial resolution than AFM. The conductive AFM measurements have shown that the Cr-related point defects near the surface are responsible for the leakage of the macroscopic Schottky junctions, and also that NCs near the surface are sensitive to the mechanical and electrical stress induced by the scanning probe.

No MeSH data available.


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Tapping-mode images of a 1 μm × 1 μm area on the sample with NCs near the surface. (a) amplitude, (b) phase.
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Figure 4: Tapping-mode images of a 1 μm × 1 μm area on the sample with NCs near the surface. (a) amplitude, (b) phase.

Mentions: In samples with NCs 50 nm deep below the surface, the morphology and the phase of the tapping-mode AFM of the silicon surface measured are shown in Figure 4a,b, respectively. The NCs are hardly visible in both amplitude and phase images; the interaction of the vibrating tip with NCs embedded 50 nm deep in silicon is weak.


Microscopic study of electrical properties of CrSi2 nanocrystals in silicon.

Dózsa L, Lányi S, Raineri V, Giannazzo F, Galkin NG - Nanoscale Res Lett (2011)

Tapping-mode images of a 1 μm × 1 μm area on the sample with NCs near the surface. (a) amplitude, (b) phase.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211265&req=5

Figure 4: Tapping-mode images of a 1 μm × 1 μm area on the sample with NCs near the surface. (a) amplitude, (b) phase.
Mentions: In samples with NCs 50 nm deep below the surface, the morphology and the phase of the tapping-mode AFM of the silicon surface measured are shown in Figure 4a,b, respectively. The NCs are hardly visible in both amplitude and phase images; the interaction of the vibrating tip with NCs embedded 50 nm deep in silicon is weak.

Bottom Line: Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface.The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface.SCM has revealed NCs deep below the surface not seen by AFM.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Science, P, O, Box 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface. The electrical characteristics were investigated in Schottky junctions by current-voltage and capacitance-voltage measurements. Atomic force microscopy (AFM), conductive AFM and scanning probe capacitance microscopy (SCM) were applied to reveal morphology and local electrical properties. The scanning probe methods yielded specific information, and tapping-mode AFM has shown up to 13-nm-high large-area protrusions not seen in the contact-mode AFM. The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface. SCM has revealed NCs deep below the surface not seen by AFM. The electrically active probe yielded significantly better spatial resolution than AFM. The conductive AFM measurements have shown that the Cr-related point defects near the surface are responsible for the leakage of the macroscopic Schottky junctions, and also that NCs near the surface are sensitive to the mechanical and electrical stress induced by the scanning probe.

No MeSH data available.


Related in: MedlinePlus