Limits...
Ordered GeSi nanorings grown on patterned Si (001) substrates.

Ma Y, Cui J, Fan Y, Zhong Z, Jiang Z - Nanoscale Res Lett (2011)

Bottom Line: An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated.The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes.Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China. tsuijian@gmail.com.

ABSTRACT
An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

No MeSH data available.


Related in: MedlinePlus

Distribution of lateral sizes. (a)  pits after etching, (b)  pits with QDs therein and diameters of (c)  ordered QDs, (d)  ordered nanorings grown at 610°C, (e)  ordered nanorings grown at 640°C and (f)  ordered nanorings grown at 610°C and then annealed at 610°C for 30 min. (g) Summary of the mean values.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211261&req=5

Figure 6: Distribution of lateral sizes. (a) pits after etching, (b) pits with QDs therein and diameters of (c) ordered QDs, (d) ordered nanorings grown at 610°C, (e) ordered nanorings grown at 640°C and (f) ordered nanorings grown at 610°C and then annealed at 610°C for 30 min. (g) Summary of the mean values.

Mentions: Figure 6a-f show the histograms of the pit-pattern and the grown samples with different processing parameters. The standard deviation ΔL, the mean value 〈L〉 and the dispersion δ = ΔL/〈L〉are obtained. All the data can be fitted by a gaussian function, and the fitting curves are also given. The mean values are plotted in Figure 6g. The mean lateral size of the fabricated pits is about 92 nm, which is even smaller than that fabricated by using 200 nm PS nanospheres. However, δ is as large as 10%, which is caused by the RIE process, because δ of 430 nm PS nanospheres is only about 3% and KOH etching process has slight influences [16]. From the AFM images of ordered QDs and nanorings, deep trenches, which often exist in QDs grown on patterned substrate [13], can be observed around QDs and nanorings. For the ordered QD sample, each QD locates in one pit. The mean lateral size of the pits is 304 nm, which is much larger than that of the original pits. The enlargement of the lateral size of the pits may be caused by the anisotropically grown buffer layer.


Ordered GeSi nanorings grown on patterned Si (001) substrates.

Ma Y, Cui J, Fan Y, Zhong Z, Jiang Z - Nanoscale Res Lett (2011)

Distribution of lateral sizes. (a)  pits after etching, (b)  pits with QDs therein and diameters of (c)  ordered QDs, (d)  ordered nanorings grown at 610°C, (e)  ordered nanorings grown at 640°C and (f)  ordered nanorings grown at 610°C and then annealed at 610°C for 30 min. (g) Summary of the mean values.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211261&req=5

Figure 6: Distribution of lateral sizes. (a) pits after etching, (b) pits with QDs therein and diameters of (c) ordered QDs, (d) ordered nanorings grown at 610°C, (e) ordered nanorings grown at 640°C and (f) ordered nanorings grown at 610°C and then annealed at 610°C for 30 min. (g) Summary of the mean values.
Mentions: Figure 6a-f show the histograms of the pit-pattern and the grown samples with different processing parameters. The standard deviation ΔL, the mean value 〈L〉 and the dispersion δ = ΔL/〈L〉are obtained. All the data can be fitted by a gaussian function, and the fitting curves are also given. The mean values are plotted in Figure 6g. The mean lateral size of the fabricated pits is about 92 nm, which is even smaller than that fabricated by using 200 nm PS nanospheres. However, δ is as large as 10%, which is caused by the RIE process, because δ of 430 nm PS nanospheres is only about 3% and KOH etching process has slight influences [16]. From the AFM images of ordered QDs and nanorings, deep trenches, which often exist in QDs grown on patterned substrate [13], can be observed around QDs and nanorings. For the ordered QD sample, each QD locates in one pit. The mean lateral size of the pits is 304 nm, which is much larger than that of the original pits. The enlargement of the lateral size of the pits may be caused by the anisotropically grown buffer layer.

Bottom Line: An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated.The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes.Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China. tsuijian@gmail.com.

ABSTRACT
An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

No MeSH data available.


Related in: MedlinePlus