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Ordered GeSi nanorings grown on patterned Si (001) substrates.

Ma Y, Cui J, Fan Y, Zhong Z, Jiang Z - Nanoscale Res Lett (2011)

Bottom Line: An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated.The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes.Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China. tsuijian@gmail.com.

ABSTRACT
An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

No MeSH data available.


AFM images of ordered nanorings grown at 610°C with Si capping thicknesses of (a) 1.5 nm (b) 2.0 nm(c) 3.0 nm (d) 4.0 nm.
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Figure 5: AFM images of ordered nanorings grown at 610°C with Si capping thicknesses of (a) 1.5 nm (b) 2.0 nm(c) 3.0 nm (d) 4.0 nm.

Mentions: Figure 5 shows the AFM images of the samples with different thicknesses of Si capping layers. The periodic characteristic is preserved. At low coverage of Si capping layer (smaller than 2 nm), only shallow dips at the center of QDs can be observed or a portion of QDs transforms into nanorings, as shown in Figure 5a and 5b. When the thickness of Si capping layer is about 3 nm or above, most QDs transform into nanorings, as shown in Figure 5c and 5d. It is clearly seen that this transformation is consistent with the case of flat substrate by Si capping on randomly distributed self-assembled GeSi QDs [10]. The formation mechanism proposed by Cui et al. applies for both flat and patterned substrates.


Ordered GeSi nanorings grown on patterned Si (001) substrates.

Ma Y, Cui J, Fan Y, Zhong Z, Jiang Z - Nanoscale Res Lett (2011)

AFM images of ordered nanorings grown at 610°C with Si capping thicknesses of (a) 1.5 nm (b) 2.0 nm(c) 3.0 nm (d) 4.0 nm.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211261&req=5

Figure 5: AFM images of ordered nanorings grown at 610°C with Si capping thicknesses of (a) 1.5 nm (b) 2.0 nm(c) 3.0 nm (d) 4.0 nm.
Mentions: Figure 5 shows the AFM images of the samples with different thicknesses of Si capping layers. The periodic characteristic is preserved. At low coverage of Si capping layer (smaller than 2 nm), only shallow dips at the center of QDs can be observed or a portion of QDs transforms into nanorings, as shown in Figure 5a and 5b. When the thickness of Si capping layer is about 3 nm or above, most QDs transform into nanorings, as shown in Figure 5c and 5d. It is clearly seen that this transformation is consistent with the case of flat substrate by Si capping on randomly distributed self-assembled GeSi QDs [10]. The formation mechanism proposed by Cui et al. applies for both flat and patterned substrates.

Bottom Line: An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated.The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes.Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China. tsuijian@gmail.com.

ABSTRACT
An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

No MeSH data available.