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Ordered GeSi nanorings grown on patterned Si (001) substrates.

Ma Y, Cui J, Fan Y, Zhong Z, Jiang Z - Nanoscale Res Lett (2011)

Bottom Line: An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated.The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes.Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China. tsuijian@gmail.com.

ABSTRACT
An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

No MeSH data available.


QDs grown on 200 nm period pit-patterned substrate. Clearly, GeSi alloy layer between neighboring QDs can be observed.
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Figure 4: QDs grown on 200 nm period pit-patterned substrate. Clearly, GeSi alloy layer between neighboring QDs can be observed.

Mentions: The distance d between neighboring QDs, which is predetermined by the pattern, is crucial for the growth of nanorings on patterned substrates. When d is small, e.g., 200 nm, experiment result shows that beside the pits where GeSi QDs are grown, the deposited Ge atoms can also accumulate on the area between neighboring QDs to form a very thin GeSi alloy layer, as shown in Figure 4. A network composed of such thin layers can be seen in a large area AFM scan. In this case, QDs can scarcely transform into nanorings when a thin Si capping layer is deposited, which is similar to the case of very high QD density [23]. By using larger PS nanospheres with a diameter of 430 nm and the fabrication processes described previously, no such network was observed, and most of QDs transformed into nanorings.


Ordered GeSi nanorings grown on patterned Si (001) substrates.

Ma Y, Cui J, Fan Y, Zhong Z, Jiang Z - Nanoscale Res Lett (2011)

QDs grown on 200 nm period pit-patterned substrate. Clearly, GeSi alloy layer between neighboring QDs can be observed.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211261&req=5

Figure 4: QDs grown on 200 nm period pit-patterned substrate. Clearly, GeSi alloy layer between neighboring QDs can be observed.
Mentions: The distance d between neighboring QDs, which is predetermined by the pattern, is crucial for the growth of nanorings on patterned substrates. When d is small, e.g., 200 nm, experiment result shows that beside the pits where GeSi QDs are grown, the deposited Ge atoms can also accumulate on the area between neighboring QDs to form a very thin GeSi alloy layer, as shown in Figure 4. A network composed of such thin layers can be seen in a large area AFM scan. In this case, QDs can scarcely transform into nanorings when a thin Si capping layer is deposited, which is similar to the case of very high QD density [23]. By using larger PS nanospheres with a diameter of 430 nm and the fabrication processes described previously, no such network was observed, and most of QDs transformed into nanorings.

Bottom Line: An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated.The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes.Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China. tsuijian@gmail.com.

ABSTRACT
An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

No MeSH data available.