Schematic sample structure.

Ordered GeSi nanorings grown on patterned Si (001) substrates. Ma Y, Cui J, Fan Y, Zhong Z, Jiang Z - Nanoscale Res Lett (2011) Bottom Line: An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated.The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes.Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more. View Article: PubMed Central - HTML - PubMed Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China. tsuijian@gmail.com. ABSTRACT An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more. No MeSH data available.	© Copyright Policy - open-access Related In: Results - Collection License Show All Figures getmorefigures.php?uid=PMC3211261&req=5 Figure 2: Schematic sample structure. Mentions: The pit-patterned substrate was. cleaned by RCA method and passivated by HF before loading into the MBE chamber (Riber Eva-32). The growth rate of Si and Ge was 0.5 and 0.06 Å·s-1, respectively. The sample structures consist of two layers, one QD layer and one nanoring layer, as illustrated in Figure 2.

Ordered GeSi nanorings grown on patterned Si (001) substrates.

Ma Y, Cui J, Fan Y, Zhong Z, Jiang Z - Nanoscale Res Lett (2011)

Bottom Line: An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated.The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes.Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China. tsuijian@gmail.com.

ABSTRACT

An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more.

No MeSH data available.

Related In: Results - Collection

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Figure 2: Schematic sample structure.

Mentions: The pit-patterned substrate was. cleaned by RCA method and passivated by HF before loading into the MBE chamber (Riber Eva-32). The growth rate of Si and Ge was 0.5 and 0.06 Å·s-1, respectively. The sample structures consist of two layers, one QD layer and one nanoring layer, as illustrated in Figure 2.