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Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.

Li Z, Zhang B, Wang J, Liu J, Liu X, Yang S, Zhu Q, Wang Z - Nanoscale Res Lett (2011)

Bottom Line: The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy.The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment.The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P,O, Box 912, Beijing 100083, People's Republic of China. lizhiwei@semi.ac.cn.

ABSTRACT
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.

No MeSH data available.


Schematic representation of the band line-up at an InN/SrTiO3 heterojunction at the room temperature. A type-I heterojunction is formed in the straddling configuration.
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Figure 2: Schematic representation of the band line-up at an InN/SrTiO3 heterojunction at the room temperature. A type-I heterojunction is formed in the straddling configuration.

Mentions: Making use of the band gap of InN (0.64 eV) [26] and SrTiO3 (3.2 eV) [27], the CBO (ΔEC) is calculated to be 1.30 eV and the ratio of ΔEC/ΔEV is close to 1:1. As shown in Figure 2, a type-I heterojunction is seen to be formed in the straddling configuration. As mentioned above, STO can be utilized as the gate oxide for InN-based metal-oxide semiconductor and the gate leakage is expected to be negligible because of the large CBO between STO and InN, which is different from the Si-based devices [28].


Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.

Li Z, Zhang B, Wang J, Liu J, Liu X, Yang S, Zhu Q, Wang Z - Nanoscale Res Lett (2011)

Schematic representation of the band line-up at an InN/SrTiO3 heterojunction at the room temperature. A type-I heterojunction is formed in the straddling configuration.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211249&req=5

Figure 2: Schematic representation of the band line-up at an InN/SrTiO3 heterojunction at the room temperature. A type-I heterojunction is formed in the straddling configuration.
Mentions: Making use of the band gap of InN (0.64 eV) [26] and SrTiO3 (3.2 eV) [27], the CBO (ΔEC) is calculated to be 1.30 eV and the ratio of ΔEC/ΔEV is close to 1:1. As shown in Figure 2, a type-I heterojunction is seen to be formed in the straddling configuration. As mentioned above, STO can be utilized as the gate oxide for InN-based metal-oxide semiconductor and the gate leakage is expected to be negligible because of the large CBO between STO and InN, which is different from the Si-based devices [28].

Bottom Line: The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy.The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment.The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P,O, Box 912, Beijing 100083, People's Republic of China. lizhiwei@semi.ac.cn.

ABSTRACT
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.

No MeSH data available.