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Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.

Sahu BS, Delachat F, Slaoui A, Carrada M, Ferblantier G, Muller D - Nanoscale Res Lett (2011)

Bottom Line: The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties.A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C.A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: InESS-UdS-CNRS, 23 Rue du Loess, 67037 Strasbourg, France. sahu.bhabani@iness.c-strasbourg.fr.

ABSTRACT
In this study, a wide range of a-SiNx:H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties. A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C. The possible origins of the PL are briefly discussed. The authors have succeeded in the formation of amorphous Si quantum dots with an average size of about 3 to 3.6 nm by varying excess amount of Si and annealing temperature. Electrical properties have been investigated on Al/Si3N4/SRSN/SiO2/Si structures by capacitance-voltage and conductance-voltage analysis techniques. A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

No MeSH data available.


Related in: MedlinePlus

FTIR transmission spectra of (a) as-deposited Si3N4/SRSN/SiO2 films, (b) sample S4 containing 33 at.% of silicon excess and annealed within the temperature range of 500-1100°C for 30 min in N2 ambient, (c) evolution of Si-N stretching band position of samples S1, S2, S3, and S4 as a function of annealing temperature.
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Figure 3: FTIR transmission spectra of (a) as-deposited Si3N4/SRSN/SiO2 films, (b) sample S4 containing 33 at.% of silicon excess and annealed within the temperature range of 500-1100°C for 30 min in N2 ambient, (c) evolution of Si-N stretching band position of samples S1, S2, S3, and S4 as a function of annealing temperature.

Mentions: FTIR spectra of as-deposited Si3N4/SRSN/SiO2 structures are shown in Figure 3a. These spectra exhibit the characteristic features of Si-N asymmetric stretching (820 cm-1), Si-O-Si stretching (1060 cm-1), and Si-H stretching modes (2170 cm-1) [19,20]. The peak present around 450 cm-1 can be ascribed to an overlapping of Si-O-Si rocking mode and Si-N breathing mode [21]. No clear feature of N-H stretching mode around 3350 cm-1 is observed. It is speculated that the total amount of N-H bonds (if any) is below the detection limit of FTIR. Previously, Xu et al. [22] have reported that at higher MW power, N-H bonds are less possible to form, survive, and remain in the silicon nitride as they are most likely to be dissociated at a higher MW power [22]. However, the MW power in this study is lower than that used in [22]. Furthermore, Martinez et al. have explained this behavior based on the following chemical reaction [21]:


Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.

Sahu BS, Delachat F, Slaoui A, Carrada M, Ferblantier G, Muller D - Nanoscale Res Lett (2011)

FTIR transmission spectra of (a) as-deposited Si3N4/SRSN/SiO2 films, (b) sample S4 containing 33 at.% of silicon excess and annealed within the temperature range of 500-1100°C for 30 min in N2 ambient, (c) evolution of Si-N stretching band position of samples S1, S2, S3, and S4 as a function of annealing temperature.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211231&req=5

Figure 3: FTIR transmission spectra of (a) as-deposited Si3N4/SRSN/SiO2 films, (b) sample S4 containing 33 at.% of silicon excess and annealed within the temperature range of 500-1100°C for 30 min in N2 ambient, (c) evolution of Si-N stretching band position of samples S1, S2, S3, and S4 as a function of annealing temperature.
Mentions: FTIR spectra of as-deposited Si3N4/SRSN/SiO2 structures are shown in Figure 3a. These spectra exhibit the characteristic features of Si-N asymmetric stretching (820 cm-1), Si-O-Si stretching (1060 cm-1), and Si-H stretching modes (2170 cm-1) [19,20]. The peak present around 450 cm-1 can be ascribed to an overlapping of Si-O-Si rocking mode and Si-N breathing mode [21]. No clear feature of N-H stretching mode around 3350 cm-1 is observed. It is speculated that the total amount of N-H bonds (if any) is below the detection limit of FTIR. Previously, Xu et al. [22] have reported that at higher MW power, N-H bonds are less possible to form, survive, and remain in the silicon nitride as they are most likely to be dissociated at a higher MW power [22]. However, the MW power in this study is lower than that used in [22]. Furthermore, Martinez et al. have explained this behavior based on the following chemical reaction [21]:

Bottom Line: The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties.A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C.A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: InESS-UdS-CNRS, 23 Rue du Loess, 67037 Strasbourg, France. sahu.bhabani@iness.c-strasbourg.fr.

ABSTRACT
In this study, a wide range of a-SiNx:H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties. A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C. The possible origins of the PL are briefly discussed. The authors have succeeded in the formation of amorphous Si quantum dots with an average size of about 3 to 3.6 nm by varying excess amount of Si and annealing temperature. Electrical properties have been investigated on Al/Si3N4/SRSN/SiO2/Si structures by capacitance-voltage and conductance-voltage analysis techniques. A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

No MeSH data available.


Related in: MedlinePlus