Limits...
Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.

Sahu BS, Delachat F, Slaoui A, Carrada M, Ferblantier G, Muller D - Nanoscale Res Lett (2011)

Bottom Line: The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties.A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C.A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: InESS-UdS-CNRS, 23 Rue du Loess, 67037 Strasbourg, France. sahu.bhabani@iness.c-strasbourg.fr.

ABSTRACT
In this study, a wide range of a-SiNx:H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties. A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C. The possible origins of the PL are briefly discussed. The authors have succeeded in the formation of amorphous Si quantum dots with an average size of about 3 to 3.6 nm by varying excess amount of Si and annealing temperature. Electrical properties have been investigated on Al/Si3N4/SRSN/SiO2/Si structures by capacitance-voltage and conductance-voltage analysis techniques. A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

No MeSH data available.


Atomic fraction of Si, N, and H versus gas flow ratio in SRSN films deposited on Si substrates, as measured by RBS and ERDA techniques.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211231&req=5

Figure 1: Atomic fraction of Si, N, and H versus gas flow ratio in SRSN films deposited on Si substrates, as measured by RBS and ERDA techniques.

Mentions: Figure 1 depicts the variation of atomic content of silicon, nitrogen, and hydrogen, as estimated from RBS and ERDA measurements on 50 nm of SRSN layers deposited on Si-substrates with different gas flow ratios. In particular, the SiNx samples deposited at a gas flow ratio (R = NH3/SiH4) of 2.07 (or higher) are close to stoichiometric, whereas samples deposited using lower R values are silicon rich, being characterized by excess of Si ranging from 50 to 20 at.% in this study. As evidenced from ERDA measurements, the total amount of hydrogen content decreases from 16 to 6 at.% upon increasing R from 1 to 1.93. In the present investigation, the authors have focused on four sets of samples having an excess of Si in the range 33-22 at.%. The samples are defined with notations S1, S2, S3, and S4, where higher numbers refer to higher Si excess in the SiNx matrix (see Table 1). The samples were further sandwiched between a bottom thermal oxide and a top stoichiometric Si3N4 for further study.


Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.

Sahu BS, Delachat F, Slaoui A, Carrada M, Ferblantier G, Muller D - Nanoscale Res Lett (2011)

Atomic fraction of Si, N, and H versus gas flow ratio in SRSN films deposited on Si substrates, as measured by RBS and ERDA techniques.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211231&req=5

Figure 1: Atomic fraction of Si, N, and H versus gas flow ratio in SRSN films deposited on Si substrates, as measured by RBS and ERDA techniques.
Mentions: Figure 1 depicts the variation of atomic content of silicon, nitrogen, and hydrogen, as estimated from RBS and ERDA measurements on 50 nm of SRSN layers deposited on Si-substrates with different gas flow ratios. In particular, the SiNx samples deposited at a gas flow ratio (R = NH3/SiH4) of 2.07 (or higher) are close to stoichiometric, whereas samples deposited using lower R values are silicon rich, being characterized by excess of Si ranging from 50 to 20 at.% in this study. As evidenced from ERDA measurements, the total amount of hydrogen content decreases from 16 to 6 at.% upon increasing R from 1 to 1.93. In the present investigation, the authors have focused on four sets of samples having an excess of Si in the range 33-22 at.%. The samples are defined with notations S1, S2, S3, and S4, where higher numbers refer to higher Si excess in the SiNx matrix (see Table 1). The samples were further sandwiched between a bottom thermal oxide and a top stoichiometric Si3N4 for further study.

Bottom Line: The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties.A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C.A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: InESS-UdS-CNRS, 23 Rue du Loess, 67037 Strasbourg, France. sahu.bhabani@iness.c-strasbourg.fr.

ABSTRACT
In this study, a wide range of a-SiNx:H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties. A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C. The possible origins of the PL are briefly discussed. The authors have succeeded in the formation of amorphous Si quantum dots with an average size of about 3 to 3.6 nm by varying excess amount of Si and annealing temperature. Electrical properties have been investigated on Al/Si3N4/SRSN/SiO2/Si structures by capacitance-voltage and conductance-voltage analysis techniques. A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

No MeSH data available.