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Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires.

Zhao F, Cheng GA, Zheng RT, Zhao DD, Wu SL, Deng JH - Nanoscale Res Lett (2011)

Bottom Line: Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm.Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm.The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, P, R, China. gacheng@bnu.edu.cn.

ABSTRACT
Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

No MeSH data available.


J-E curves of 20-nm Au film-coated SiNWs post-annealed at different temperatures, which show that the excellent FE properties of Au20/SiNWs with low Eon values have been obtained after post-annealing processing above 650°C. The inset shows corresponding F-N plots.
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Figure 4: J-E curves of 20-nm Au film-coated SiNWs post-annealed at different temperatures, which show that the excellent FE properties of Au20/SiNWs with low Eon values have been obtained after post-annealing processing above 650°C. The inset shows corresponding F-N plots.

Mentions: Further examination was carried out via annealing the Au/SiNWs with different thicknesses at 650°C. Figure 3 shows the FE properties of the post-annealed Au/SiNWs with different thicknesses at 650°C. From Figure 3, it can be seen that J-E curves of the post-annealed Au/SiNWs are overlapping with each other and located at a lower applied field than that of as-grown SiNWs. The corresponding values of Eon are 2.25, 2.31, and 2.19 V/μm for the annealed Au20/SiNWs, Au60/SiNWs, and Au80/SiNWs, respectively, where relative changes of Eon values are very small. At the same time, the FE properties of the post-annealed Au20/SiNWs at different temperatures are depicted in Figure 4 and Table 2, which show that the post-annealing temperature increase makes the J-E curves of samples move to lower applied field. The similar J-E curves can be obtained after post-annealing above 650°C. According to the J-E curves, Eon values of Au20/SiNWs post-annealed at 500, 650, and 800°C are 3.37, 2.25, and 1.95 V/μm, respectively, and the applied fields, at which J is 200 μA/cm2, are 4.53, 2.88, and 2.79 V/μm, respectively. These results indicate that electrons can emit easily from the tips of the post-annealed Au/SiNWs at a lower applied field, and suggest that the FE properties of Au/SiNWs are remarkably improved due to post-annealing processing.


Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires.

Zhao F, Cheng GA, Zheng RT, Zhao DD, Wu SL, Deng JH - Nanoscale Res Lett (2011)

J-E curves of 20-nm Au film-coated SiNWs post-annealed at different temperatures, which show that the excellent FE properties of Au20/SiNWs with low Eon values have been obtained after post-annealing processing above 650°C. The inset shows corresponding F-N plots.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211229&req=5

Figure 4: J-E curves of 20-nm Au film-coated SiNWs post-annealed at different temperatures, which show that the excellent FE properties of Au20/SiNWs with low Eon values have been obtained after post-annealing processing above 650°C. The inset shows corresponding F-N plots.
Mentions: Further examination was carried out via annealing the Au/SiNWs with different thicknesses at 650°C. Figure 3 shows the FE properties of the post-annealed Au/SiNWs with different thicknesses at 650°C. From Figure 3, it can be seen that J-E curves of the post-annealed Au/SiNWs are overlapping with each other and located at a lower applied field than that of as-grown SiNWs. The corresponding values of Eon are 2.25, 2.31, and 2.19 V/μm for the annealed Au20/SiNWs, Au60/SiNWs, and Au80/SiNWs, respectively, where relative changes of Eon values are very small. At the same time, the FE properties of the post-annealed Au20/SiNWs at different temperatures are depicted in Figure 4 and Table 2, which show that the post-annealing temperature increase makes the J-E curves of samples move to lower applied field. The similar J-E curves can be obtained after post-annealing above 650°C. According to the J-E curves, Eon values of Au20/SiNWs post-annealed at 500, 650, and 800°C are 3.37, 2.25, and 1.95 V/μm, respectively, and the applied fields, at which J is 200 μA/cm2, are 4.53, 2.88, and 2.79 V/μm, respectively. These results indicate that electrons can emit easily from the tips of the post-annealed Au/SiNWs at a lower applied field, and suggest that the FE properties of Au/SiNWs are remarkably improved due to post-annealing processing.

Bottom Line: Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm.Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm.The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, P, R, China. gacheng@bnu.edu.cn.

ABSTRACT
Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

No MeSH data available.