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Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires.

Zhao F, Cheng GA, Zheng RT, Zhao DD, Wu SL, Deng JH - Nanoscale Res Lett (2011)

Bottom Line: Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm.Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm.The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, P, R, China. gacheng@bnu.edu.cn.

ABSTRACT
Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

No MeSH data available.


J-E curves of Au/SiNWs with different thickness, in which thicknesses increase of Au film induces the J-E curves shifting to higher applied field and makes FE properties worsen. The inset is corresponding F-N plots.
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Figure 2: J-E curves of Au/SiNWs with different thickness, in which thicknesses increase of Au film induces the J-E curves shifting to higher applied field and makes FE properties worsen. The inset is corresponding F-N plots.

Mentions: The FE properties of SiNWs were measured at the room temperature. The curves in Figure 2 display the emission current density (J) of SiNWs and Au/SiNWs as a function of the applied field (E), and the inset is F-N plots of samples. The obtained J-E curves gradually shift to the highly applied field with the increase of Au film thickness, and turn-on fields (Eon) (which are defined as the field when J reaches 10 μA/cm2) are 5.01, 6.02, 6.03, and 7.51 V/μm for the as-grown SiNWs, Au20/SiNWs, Au60/SiNWs, and Au80/SiNWs, respectively. The shifting of J-E curve to the highly applied field and the high value of Eon demonstrate that electrons are harder to emit from the tips of Au nano-particles than that from the tips of SiNWs, and FE properties of SiNWs have been strongly affected because of the deposition of Au film. The tendency can also be observed at higher J. When J reaches 100 μA/cm2, the applied field is 5.93 V/μm for as-grown SiNWs, and increases to 7.20, 7.81, and 9.18 V/μm for Au20/SiNWs, Au60/SiNWs, and Au80/SiNWs, respectively (see Table 1). These results clearly demonstrated that Au film coated to SiNWs makes FE characteristics worsen.


Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires.

Zhao F, Cheng GA, Zheng RT, Zhao DD, Wu SL, Deng JH - Nanoscale Res Lett (2011)

J-E curves of Au/SiNWs with different thickness, in which thicknesses increase of Au film induces the J-E curves shifting to higher applied field and makes FE properties worsen. The inset is corresponding F-N plots.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211229&req=5

Figure 2: J-E curves of Au/SiNWs with different thickness, in which thicknesses increase of Au film induces the J-E curves shifting to higher applied field and makes FE properties worsen. The inset is corresponding F-N plots.
Mentions: The FE properties of SiNWs were measured at the room temperature. The curves in Figure 2 display the emission current density (J) of SiNWs and Au/SiNWs as a function of the applied field (E), and the inset is F-N plots of samples. The obtained J-E curves gradually shift to the highly applied field with the increase of Au film thickness, and turn-on fields (Eon) (which are defined as the field when J reaches 10 μA/cm2) are 5.01, 6.02, 6.03, and 7.51 V/μm for the as-grown SiNWs, Au20/SiNWs, Au60/SiNWs, and Au80/SiNWs, respectively. The shifting of J-E curve to the highly applied field and the high value of Eon demonstrate that electrons are harder to emit from the tips of Au nano-particles than that from the tips of SiNWs, and FE properties of SiNWs have been strongly affected because of the deposition of Au film. The tendency can also be observed at higher J. When J reaches 100 μA/cm2, the applied field is 5.93 V/μm for as-grown SiNWs, and increases to 7.20, 7.81, and 9.18 V/μm for Au20/SiNWs, Au60/SiNWs, and Au80/SiNWs, respectively (see Table 1). These results clearly demonstrated that Au film coated to SiNWs makes FE characteristics worsen.

Bottom Line: Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm.Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm.The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, P, R, China. gacheng@bnu.edu.cn.

ABSTRACT
Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

No MeSH data available.