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Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires.

Zhao F, Cheng GA, Zheng RT, Zhao DD, Wu SL, Deng JH - Nanoscale Res Lett (2011)

Bottom Line: Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm.Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm.The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, P, R, China. gacheng@bnu.edu.cn.

ABSTRACT
Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

No MeSH data available.


Microstructures of 20 nm Au film-coated SiNWs. (a) SEM image of as-coated SiNWs, in which Au layer covered on the tip of SiNWs equally; (b) TEM Images of 20-nm Au film-coated SiNWs post-annealed at 650°C, inset in (b) is the HRTEM image of Au-Si nano-particle. TEM and HRTEM images illustrate that the Au-Si phase had been formed after post-annealing at 650°C and Au-Si nano-particle-decorated SiNWs had been fabricated.
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Figure 1: Microstructures of 20 nm Au film-coated SiNWs. (a) SEM image of as-coated SiNWs, in which Au layer covered on the tip of SiNWs equally; (b) TEM Images of 20-nm Au film-coated SiNWs post-annealed at 650°C, inset in (b) is the HRTEM image of Au-Si nano-particle. TEM and HRTEM images illustrate that the Au-Si phase had been formed after post-annealing at 650°C and Au-Si nano-particle-decorated SiNWs had been fabricated.

Mentions: As reported previously [5,21], the as-grown SiNWs are about 10 μm in length and 120 nm in diameter with single crystal structure. In order to be unconfused, SiNWs coated with Au film thicknesses of 20, 60, and 80 nm were labeled as Au20/SiNWs, Au60/SiNWs, and Au80/SiNWs, respectively. Figure 1a shows the SEM image of the top surface of the Au20/SiNWs, from which we could observe that Au nano-film with an average particle size of 51.0 nm has been covered on the top of SiNWs arrays. With the film thickness increasing from 20 to 80 nm, the average size of Au particles changes from 51.0 to 103.6 nm for Au60/SiNWs and 144.5 nm for Au80/SiNWs.


Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires.

Zhao F, Cheng GA, Zheng RT, Zhao DD, Wu SL, Deng JH - Nanoscale Res Lett (2011)

Microstructures of 20 nm Au film-coated SiNWs. (a) SEM image of as-coated SiNWs, in which Au layer covered on the tip of SiNWs equally; (b) TEM Images of 20-nm Au film-coated SiNWs post-annealed at 650°C, inset in (b) is the HRTEM image of Au-Si nano-particle. TEM and HRTEM images illustrate that the Au-Si phase had been formed after post-annealing at 650°C and Au-Si nano-particle-decorated SiNWs had been fabricated.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211229&req=5

Figure 1: Microstructures of 20 nm Au film-coated SiNWs. (a) SEM image of as-coated SiNWs, in which Au layer covered on the tip of SiNWs equally; (b) TEM Images of 20-nm Au film-coated SiNWs post-annealed at 650°C, inset in (b) is the HRTEM image of Au-Si nano-particle. TEM and HRTEM images illustrate that the Au-Si phase had been formed after post-annealing at 650°C and Au-Si nano-particle-decorated SiNWs had been fabricated.
Mentions: As reported previously [5,21], the as-grown SiNWs are about 10 μm in length and 120 nm in diameter with single crystal structure. In order to be unconfused, SiNWs coated with Au film thicknesses of 20, 60, and 80 nm were labeled as Au20/SiNWs, Au60/SiNWs, and Au80/SiNWs, respectively. Figure 1a shows the SEM image of the top surface of the Au20/SiNWs, from which we could observe that Au nano-film with an average particle size of 51.0 nm has been covered on the top of SiNWs arrays. With the film thickness increasing from 20 to 80 nm, the average size of Au particles changes from 51.0 to 103.6 nm for Au60/SiNWs and 144.5 nm for Au80/SiNWs.

Bottom Line: Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm.Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm.The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, P, R, China. gacheng@bnu.edu.cn.

ABSTRACT
Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

No MeSH data available.