Limits...
Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

No MeSH data available.


Related in: MedlinePlus

Ln I vs. ln V representation of MIS structure based on SiO2-Sinc layer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211223&req=5

Figure 5: Ln I vs. ln V representation of MIS structure based on SiO2-Sinc layer.

Mentions: The same approach has been used for the N-free Si-rich layer. No current variation in the SiO2-Sinc layer according to the electric field has been observed (Figure 2) demonstrating that Poole-Frenkel mechanism is not the conduction mode in such an MIS structure. Fowler-Nordheim tunneling conduction has also been tested for this layer (see Figure 4) and no variation is observed following equation 5. Therefore, the electrical behavior of this layer in both reverse and forward bias cannot be explained by Fowler-Nordheim tunneling conduction. However, the forward current characteristics plotted with a representation in ln(I) = ln(V) in Figure 5 can be divided into three regions. In this case, the current follows a voltage power law (I ∝ Vn). In the first region (V < 0.2 V) n = 1 corresponding to an ohmic behavior where the deduced intrinsic resistivity of the material (ρ = 2.7 × 1011 Ω cm-1) is typical of (semi) insulator. For higher voltages (0.2 V < V < 0.4 V), conduction mechanism is due to space charge limited conduction dominated by a discrete trapping level in the second region (n = 2) and by exponential distribution in the third region (n > 2). From this characteristic, the density nt of the trapped electrons can be extracted accordingly:


Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Ln I vs. ln V representation of MIS structure based on SiO2-Sinc layer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211223&req=5

Figure 5: Ln I vs. ln V representation of MIS structure based on SiO2-Sinc layer.
Mentions: The same approach has been used for the N-free Si-rich layer. No current variation in the SiO2-Sinc layer according to the electric field has been observed (Figure 2) demonstrating that Poole-Frenkel mechanism is not the conduction mode in such an MIS structure. Fowler-Nordheim tunneling conduction has also been tested for this layer (see Figure 4) and no variation is observed following equation 5. Therefore, the electrical behavior of this layer in both reverse and forward bias cannot be explained by Fowler-Nordheim tunneling conduction. However, the forward current characteristics plotted with a representation in ln(I) = ln(V) in Figure 5 can be divided into three regions. In this case, the current follows a voltage power law (I ∝ Vn). In the first region (V < 0.2 V) n = 1 corresponding to an ohmic behavior where the deduced intrinsic resistivity of the material (ρ = 2.7 × 1011 Ω cm-1) is typical of (semi) insulator. For higher voltages (0.2 V < V < 0.4 V), conduction mechanism is due to space charge limited conduction dominated by a discrete trapping level in the second region (n = 2) and by exponential distribution in the third region (n > 2). From this characteristic, the density nt of the trapped electrons can be extracted accordingly:

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

No MeSH data available.


Related in: MedlinePlus