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Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

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Fowler-Nordheim tunnel representation of Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si structures.
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Figure 4: Fowler-Nordheim tunnel representation of Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si structures.

Mentions: For low temperatures, J does not depend on the temperature indicating that it is more representative of a tunnel conduction way. This behavior is more pronounced at high reverse bias because of the linear decrease of the J/E2 = f(1/E) plot (Figure 4) according to the Fowler-Nordheim model given as [20]:


Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Fowler-Nordheim tunnel representation of Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si structures.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211223&req=5

Figure 4: Fowler-Nordheim tunnel representation of Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si structures.
Mentions: For low temperatures, J does not depend on the temperature indicating that it is more representative of a tunnel conduction way. This behavior is more pronounced at high reverse bias because of the linear decrease of the J/E2 = f(1/E) plot (Figure 4) according to the Fowler-Nordheim model given as [20]:

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

No MeSH data available.


Related in: MedlinePlus