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Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

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Arrhenius representations of the current density of the SiOxNy-Sinc layer made MIS structures.
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Figure 3: Arrhenius representations of the current density of the SiOxNy-Sinc layer made MIS structures.

Mentions: Arrhenius diagrams of ln(J) vs 1/T (Figure 3) show a temperature dependence of the reverse current that confirms a thermal activation of the current and consequently that the carrier transport follows a PF mechanism. The carriers' emission from defects following such a mechanism is enhanced by a barrier lowering where the electrical field is the most important, that means at the PN junction interface. In this way, the Poole-Frenkel emission of carriers may likely occur from defects in the bulk of the SiOxNy matrix located at Sinc/SiOxNy interfaces [12] close to the p-type silicon substrate.


Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Arrhenius representations of the current density of the SiOxNy-Sinc layer made MIS structures.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211223&req=5

Figure 3: Arrhenius representations of the current density of the SiOxNy-Sinc layer made MIS structures.
Mentions: Arrhenius diagrams of ln(J) vs 1/T (Figure 3) show a temperature dependence of the reverse current that confirms a thermal activation of the current and consequently that the carrier transport follows a PF mechanism. The carriers' emission from defects following such a mechanism is enhanced by a barrier lowering where the electrical field is the most important, that means at the PN junction interface. In this way, the Poole-Frenkel emission of carriers may likely occur from defects in the bulk of the SiOxNy matrix located at Sinc/SiOxNy interfaces [12] close to the p-type silicon substrate.

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

No MeSH data available.


Related in: MedlinePlus