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Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

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Plots of the ln(J/E) vs E1/2 of Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si structures.
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Figure 2: Plots of the ln(J/E) vs E1/2 of Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si structures.

Mentions: This latter is extracted from the linear representation of ln(J/E) = f(E1/2) (Figure 2) and is related to the permittivity of active layer, and thus to the material composition, following the relation:


Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Plots of the ln(J/E) vs E1/2 of Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si structures.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211223&req=5

Figure 2: Plots of the ln(J/E) vs E1/2 of Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si structures.
Mentions: This latter is extracted from the linear representation of ln(J/E) = f(E1/2) (Figure 2) and is related to the permittivity of active layer, and thus to the material composition, following the relation:

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

No MeSH data available.


Related in: MedlinePlus