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Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

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Comparison of devices. (a) Linear current density-voltage characteristics of MIS structure based on SiO2-Sinc and SiOxNy-Sinc layer. Inset: Schematic cross section of the tested MIS structures, (b) current density-voltage characteristics of MIS structure based on SiOxNy-Sinc layer plotted in semi log scale.
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Figure 1: Comparison of devices. (a) Linear current density-voltage characteristics of MIS structure based on SiO2-Sinc and SiOxNy-Sinc layer. Inset: Schematic cross section of the tested MIS structures, (b) current density-voltage characteristics of MIS structure based on SiOxNy-Sinc layer plotted in semi log scale.

Mentions: Devices are elaborated on p-type (111)-oriented silicon substrates with resistivity in the range 0.001-0.005 Ω cm (see inset of the Figure 1a). A SiO2-Sinc (or SiOxNy-Sinc) layer was deposited by reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma. In the case of SiOxNy layer, nitrogen gas is incorporated in the plasma leading to a final concentration of 15 at.% in the film. For more details on the deposition process, see ref. [14]. Two thicknesses d of 30 and 65 nm were deposited for each layer, which was subsequently submitted to an optimized annealing treatment at 1,050°C during 30 min under N2 flux. Next, aluminum was thermally evaporated on active layer. Both aluminum and active layers were patterned by wet etching to define the geometry of the device. A second thermal evaporation of aluminum on the back surface was carried out to ensure the ohmic contact with the p-type crystalline silicon. Finally, the devices were annealed into forming gas (H2 to N2, 10%) at 390°C during an optimum duration of 30 min to stabilize the electrical properties of the devices.


Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films.

Jacques E, Pichon L, Debieu O, Gourbilleau F - Nanoscale Res Lett (2011)

Comparison of devices. (a) Linear current density-voltage characteristics of MIS structure based on SiO2-Sinc and SiOxNy-Sinc layer. Inset: Schematic cross section of the tested MIS structures, (b) current density-voltage characteristics of MIS structure based on SiOxNy-Sinc layer plotted in semi log scale.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211223&req=5

Figure 1: Comparison of devices. (a) Linear current density-voltage characteristics of MIS structure based on SiO2-Sinc and SiOxNy-Sinc layer. Inset: Schematic cross section of the tested MIS structures, (b) current density-voltage characteristics of MIS structure based on SiOxNy-Sinc layer plotted in semi log scale.
Mentions: Devices are elaborated on p-type (111)-oriented silicon substrates with resistivity in the range 0.001-0.005 Ω cm (see inset of the Figure 1a). A SiO2-Sinc (or SiOxNy-Sinc) layer was deposited by reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma. In the case of SiOxNy layer, nitrogen gas is incorporated in the plasma leading to a final concentration of 15 at.% in the film. For more details on the deposition process, see ref. [14]. Two thicknesses d of 30 and 65 nm were deposited for each layer, which was subsequently submitted to an optimized annealing treatment at 1,050°C during 30 min under N2 flux. Next, aluminum was thermally evaporated on active layer. Both aluminum and active layers were patterned by wet etching to define the geometry of the device. A second thermal evaporation of aluminum on the back surface was carried out to ensure the ohmic contact with the p-type crystalline silicon. Finally, the devices were annealed into forming gas (H2 to N2, 10%) at 390°C during an optimum duration of 30 min to stabilize the electrical properties of the devices.

Bottom Line: We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices.Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized.For rectifier devices, the ideality factor depends on the SiOxNy layer thickness.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France. emmanuel.jacques@univ-rennes1.fr.

ABSTRACT
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

No MeSH data available.


Related in: MedlinePlus