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Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters.

Wilson PR, Roschuk T, Dunn K, Normand EN, Chelomentsev E, Zalloum OH, Wojcik J, Mascher P - Nanoscale Res Lett (2011)

Bottom Line: Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure.The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity.The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S4L7, Canada. wilsonpr@mcmaster.ca.

ABSTRACT
Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL) experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra.

No MeSH data available.


Related in: MedlinePlus

PL characteristics of films with Siex = 3% annealed at 600 and 800°C. The plots depict (a) the peak PL energy and (b) the total power density of films annealed for times ranging from 2 s to 2 h under flowing N2 ambient gas. Logarithmic fit lines are included in (a) to emphasize the trend of peak PL energy shifting to lower energies with longer annealing times and are not intended to represent a model.
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Figure 9: PL characteristics of films with Siex = 3% annealed at 600 and 800°C. The plots depict (a) the peak PL energy and (b) the total power density of films annealed for times ranging from 2 s to 2 h under flowing N2 ambient gas. Logarithmic fit lines are included in (a) to emphasize the trend of peak PL energy shifting to lower energies with longer annealing times and are not intended to represent a model.

Mentions: The peak emission energies of the annealed spectra are shown on a semilog plot in Figure 9a. The peak PL energy was determined by applying a Savitzky-Golay smoothing filter to remove the effects of noise without distorting the shape of the spectra and locating the energy at which the peak PL intensity occurred. There is a clear and steady shift from approximately 2.15 eV for the very short anneals towards 2.00 eV for annealing times approaching 2 h in length. The trend is characterized in the diagram by a logarithmic fit of the data points. The high energy shoulder in the PL spectra can be attributed to one of the silicon nitride inter-bandgap defect levels [32], which was annealed out as the length of annealing time increased. Figure 9b shows a semilog plot of the total power density of the annealed films as a function of annealing time with a dashed line representing the total power density of the AD film. Annealing caused a sharp increase in the PL intensity even at the shortest annealing times. Following this sudden increase, the total power density for the 600°C anneals continued to improve as the annealing time increased up to 2 h, albeit at a much slower rate.


Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters.

Wilson PR, Roschuk T, Dunn K, Normand EN, Chelomentsev E, Zalloum OH, Wojcik J, Mascher P - Nanoscale Res Lett (2011)

PL characteristics of films with Siex = 3% annealed at 600 and 800°C. The plots depict (a) the peak PL energy and (b) the total power density of films annealed for times ranging from 2 s to 2 h under flowing N2 ambient gas. Logarithmic fit lines are included in (a) to emphasize the trend of peak PL energy shifting to lower energies with longer annealing times and are not intended to represent a model.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211220&req=5

Figure 9: PL characteristics of films with Siex = 3% annealed at 600 and 800°C. The plots depict (a) the peak PL energy and (b) the total power density of films annealed for times ranging from 2 s to 2 h under flowing N2 ambient gas. Logarithmic fit lines are included in (a) to emphasize the trend of peak PL energy shifting to lower energies with longer annealing times and are not intended to represent a model.
Mentions: The peak emission energies of the annealed spectra are shown on a semilog plot in Figure 9a. The peak PL energy was determined by applying a Savitzky-Golay smoothing filter to remove the effects of noise without distorting the shape of the spectra and locating the energy at which the peak PL intensity occurred. There is a clear and steady shift from approximately 2.15 eV for the very short anneals towards 2.00 eV for annealing times approaching 2 h in length. The trend is characterized in the diagram by a logarithmic fit of the data points. The high energy shoulder in the PL spectra can be attributed to one of the silicon nitride inter-bandgap defect levels [32], which was annealed out as the length of annealing time increased. Figure 9b shows a semilog plot of the total power density of the annealed films as a function of annealing time with a dashed line representing the total power density of the AD film. Annealing caused a sharp increase in the PL intensity even at the shortest annealing times. Following this sudden increase, the total power density for the 600°C anneals continued to improve as the annealing time increased up to 2 h, albeit at a much slower rate.

Bottom Line: Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure.The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity.The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S4L7, Canada. wilsonpr@mcmaster.ca.

ABSTRACT
Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL) experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra.

No MeSH data available.


Related in: MedlinePlus