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Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters.

Wilson PR, Roschuk T, Dunn K, Normand EN, Chelomentsev E, Zalloum OH, Wojcik J, Mascher P - Nanoscale Res Lett (2011)

Bottom Line: Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure.The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity.The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S4L7, Canada. wilsonpr@mcmaster.ca.

ABSTRACT
Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL) experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra.

No MeSH data available.


Related in: MedlinePlus

TEY-XANES spectra at the Si K-edge for (a) low (Siex < 1%) and (b) high (Siex = 5%) excess silicon content films deposited by the ICP CVD system and annealed in a quartz tube furnace under N2 + 5% H2 ambient gas. The insets included with each plot show a magnified view of the Si-Si absorption edge with the offset between spectra removed. A Si-Si resonance shoulder onsets at temperatures as low as 900°C in the low Si content film and 600°C in the high Si content film.
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Figure 5: TEY-XANES spectra at the Si K-edge for (a) low (Siex < 1%) and (b) high (Siex = 5%) excess silicon content films deposited by the ICP CVD system and annealed in a quartz tube furnace under N2 + 5% H2 ambient gas. The insets included with each plot show a magnified view of the Si-Si absorption edge with the offset between spectra removed. A Si-Si resonance shoulder onsets at temperatures as low as 900°C in the low Si content film and 600°C in the high Si content film.

Mentions: Figures 5 and 6 show the changes in the Si K- and L3,2-edge XANES spectra for two ICP CVD grown films, one with low excess silicon content (Siex < 1%) and the other with high excess silicon content (Siex = 5%), as the annealing temperature is increased. At temperatures of 900°C and above, films with low excess silicon concentration develop a shoulder at the Si-Si bonding energy of 1842 eV, suggesting a change in the Si-nc structure and increased phase separation in these films. The position of the Si-N resonance peak shifts to higher energies, from 1845.5 to 1846 eV, and increases in magnitude as the annealing temperature is increased. At the silicon L3,2-edge, the Si-Si absorption edge at 99.7 eV is suppressed, and details of the Si clustering are not observed while the nitride matrix undergoes a clear change in structure up to 1100°C when the nitride matrix appears to break down. In films with high excess silicon content, the onset of the Si-Si shoulder in the silicon K-edge spectra occurs at temperatures as low as 600°C. This indicates that the phase separation and Si-nc formation are not solely dependent on the nitride host matrix and are instead strongly influenced by the composition of the deposited film. Changes to the Si-N peaks in the silicon K- and L3,2-edge spectra once again reflect structural changes in the nitride matrix. At the silicon L3,2-edge, the details of Si-Si bonding are also suppressed in these films until 1100°C where the nitride matrix breaks down.


Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters.

Wilson PR, Roschuk T, Dunn K, Normand EN, Chelomentsev E, Zalloum OH, Wojcik J, Mascher P - Nanoscale Res Lett (2011)

TEY-XANES spectra at the Si K-edge for (a) low (Siex < 1%) and (b) high (Siex = 5%) excess silicon content films deposited by the ICP CVD system and annealed in a quartz tube furnace under N2 + 5% H2 ambient gas. The insets included with each plot show a magnified view of the Si-Si absorption edge with the offset between spectra removed. A Si-Si resonance shoulder onsets at temperatures as low as 900°C in the low Si content film and 600°C in the high Si content film.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211220&req=5

Figure 5: TEY-XANES spectra at the Si K-edge for (a) low (Siex < 1%) and (b) high (Siex = 5%) excess silicon content films deposited by the ICP CVD system and annealed in a quartz tube furnace under N2 + 5% H2 ambient gas. The insets included with each plot show a magnified view of the Si-Si absorption edge with the offset between spectra removed. A Si-Si resonance shoulder onsets at temperatures as low as 900°C in the low Si content film and 600°C in the high Si content film.
Mentions: Figures 5 and 6 show the changes in the Si K- and L3,2-edge XANES spectra for two ICP CVD grown films, one with low excess silicon content (Siex < 1%) and the other with high excess silicon content (Siex = 5%), as the annealing temperature is increased. At temperatures of 900°C and above, films with low excess silicon concentration develop a shoulder at the Si-Si bonding energy of 1842 eV, suggesting a change in the Si-nc structure and increased phase separation in these films. The position of the Si-N resonance peak shifts to higher energies, from 1845.5 to 1846 eV, and increases in magnitude as the annealing temperature is increased. At the silicon L3,2-edge, the Si-Si absorption edge at 99.7 eV is suppressed, and details of the Si clustering are not observed while the nitride matrix undergoes a clear change in structure up to 1100°C when the nitride matrix appears to break down. In films with high excess silicon content, the onset of the Si-Si shoulder in the silicon K-edge spectra occurs at temperatures as low as 600°C. This indicates that the phase separation and Si-nc formation are not solely dependent on the nitride host matrix and are instead strongly influenced by the composition of the deposited film. Changes to the Si-N peaks in the silicon K- and L3,2-edge spectra once again reflect structural changes in the nitride matrix. At the silicon L3,2-edge, the details of Si-Si bonding are also suppressed in these films until 1100°C where the nitride matrix breaks down.

Bottom Line: Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure.The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity.The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S4L7, Canada. wilsonpr@mcmaster.ca.

ABSTRACT
Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL) experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra.

No MeSH data available.


Related in: MedlinePlus