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Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography.

Roussel M, Talbot E, Gourbilleau F, Pareige P - Nanoscale Res Lett (2011)

Bottom Line: Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques.An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described.This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

No MeSH data available.


Size distribution of Si-nc evidenced in the analyzed volume.
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Figure 5: Size distribution of Si-nc evidenced in the analyzed volume.

Mentions: where d is the diameter of the particle (in m), nSi is the number of Si atoms in the particle, VSi is the atomic volume of a Si atom (in m3), and Q the efficiency of the detector (which is 50% in our case). The maximum error on such estimation is given by the variation of d associated to the number of Si atoms corrected from the local magnification effect. This error is about 0.1 nm for the smallest precipitate. Figure 5 shows a size distribution of clusters realized in the analyzed volume using this relation.


Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography.

Roussel M, Talbot E, Gourbilleau F, Pareige P - Nanoscale Res Lett (2011)

Size distribution of Si-nc evidenced in the analyzed volume.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211216&req=5

Figure 5: Size distribution of Si-nc evidenced in the analyzed volume.
Mentions: where d is the diameter of the particle (in m), nSi is the number of Si atoms in the particle, VSi is the atomic volume of a Si atom (in m3), and Q the efficiency of the detector (which is 50% in our case). The maximum error on such estimation is given by the variation of d associated to the number of Si atoms corrected from the local magnification effect. This error is about 0.1 nm for the smallest precipitate. Figure 5 shows a size distribution of clusters realized in the analyzed volume using this relation.

Bottom Line: Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques.An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described.This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

No MeSH data available.