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Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography.

Roussel M, Talbot E, Gourbilleau F, Pareige P - Nanoscale Res Lett (2011)

Bottom Line: Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques.An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described.This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

No MeSH data available.


HRTEM image of SiO2/SRSO layers in cross-sectional view. White circles highlight two Si-ncs.
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Figure 2: HRTEM image of SiO2/SRSO layers in cross-sectional view. White circles highlight two Si-ncs.

Mentions: Before atom probe investigation, HRTEM images had been realized. An example is given in Figure 2. This image has been obtained on a Topcon 002B on samples prepared in a cross-sectional configuration. First, TEM analysis permits estimating the thickness of SRSO and SiO2 layers (3.8 and 4 nm, respectively). When diffraction conditions are obeyed, spherical crystalline clusters of silicon can be observed within the SRSO layers. Nevertheless, as noticed in former studies, only few Si-nc are evidenced by HRTEM. Therefore, it is difficult to determine an accurate size distribution, particle's density, and chemical composition of the matrix/precipitate interface. This kind of information can be obtained by APT.


Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography.

Roussel M, Talbot E, Gourbilleau F, Pareige P - Nanoscale Res Lett (2011)

HRTEM image of SiO2/SRSO layers in cross-sectional view. White circles highlight two Si-ncs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211216&req=5

Figure 2: HRTEM image of SiO2/SRSO layers in cross-sectional view. White circles highlight two Si-ncs.
Mentions: Before atom probe investigation, HRTEM images had been realized. An example is given in Figure 2. This image has been obtained on a Topcon 002B on samples prepared in a cross-sectional configuration. First, TEM analysis permits estimating the thickness of SRSO and SiO2 layers (3.8 and 4 nm, respectively). When diffraction conditions are obeyed, spherical crystalline clusters of silicon can be observed within the SRSO layers. Nevertheless, as noticed in former studies, only few Si-nc are evidenced by HRTEM. Therefore, it is difficult to determine an accurate size distribution, particle's density, and chemical composition of the matrix/precipitate interface. This kind of information can be obtained by APT.

Bottom Line: Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques.An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described.This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.

ABSTRACT
Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

No MeSH data available.