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Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy.

Lin Z, Bremond G, Bassani F - Nanoscale Res Lett (2011)

Bottom Line: Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature.The DC spectra curve shift direction and distance was observed differently for quantitative measurements.Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institut des Nanotechnologies de Lyon, UMR 5270, Institut National des Sciences Appliquées de Lyon, Université de Lyon, Bât, Blaise Pascal, 20, avenue Albert Einstein - 69621 Villeurbanne Cedex, France. zhen.lin@insa-lyon.fr.

ABSTRACT
In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

No MeSH data available.


Related in: MedlinePlus

SCM image (a) and signal (b) versus different AC bias.
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Figure 4: SCM image (a) and signal (b) versus different AC bias.

Mentions: AC bias was also investigated by fixing the DC bias to 0.5 V which is one of the best DC bias as we mentioned above. The SCM line scan image with different AC bias and its variation was shown in Figure 4. The contrast between the Si-ncs and dielectric layer changed with AC bias. The higher the AC bias, the stronger the SCM signal intensity was. However, too high AC voltage can induce charge injection in the sample which will create parasitic capacitance and high noise. Here, 2 V AC bias was fixed during the scan.


Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy.

Lin Z, Bremond G, Bassani F - Nanoscale Res Lett (2011)

SCM image (a) and signal (b) versus different AC bias.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211215&req=5

Figure 4: SCM image (a) and signal (b) versus different AC bias.
Mentions: AC bias was also investigated by fixing the DC bias to 0.5 V which is one of the best DC bias as we mentioned above. The SCM line scan image with different AC bias and its variation was shown in Figure 4. The contrast between the Si-ncs and dielectric layer changed with AC bias. The higher the AC bias, the stronger the SCM signal intensity was. However, too high AC voltage can induce charge injection in the sample which will create parasitic capacitance and high noise. Here, 2 V AC bias was fixed during the scan.

Bottom Line: Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature.The DC spectra curve shift direction and distance was observed differently for quantitative measurements.Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institut des Nanotechnologies de Lyon, UMR 5270, Institut National des Sciences Appliquées de Lyon, Université de Lyon, Bât, Blaise Pascal, 20, avenue Albert Einstein - 69621 Villeurbanne Cedex, France. zhen.lin@insa-lyon.fr.

ABSTRACT
In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

No MeSH data available.


Related in: MedlinePlus