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Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy.

Lin Z, Bremond G, Bassani F - Nanoscale Res Lett (2011)

Bottom Line: Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature.The DC spectra curve shift direction and distance was observed differently for quantitative measurements.Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institut des Nanotechnologies de Lyon, UMR 5270, Institut National des Sciences Appliquées de Lyon, Université de Lyon, Bât, Blaise Pascal, 20, avenue Albert Einstein - 69621 Villeurbanne Cedex, France. zhen.lin@insa-lyon.fr.

ABSTRACT
In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

No MeSH data available.


Related in: MedlinePlus

Si nanocrystal images. (a) Topography (b) SCM data image.
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Figure 2: Si nanocrystal images. (a) Topography (b) SCM data image.

Mentions: Veeco Digital Instruments 3100 Dimensions AFM employing a Nanoscope V controller was used to conduct SCM and SCS measurements. The conductive tip that was selected was commercial Arrow-EFM PtIr coating tip. It has an average tip radius of less than 10 nm, cantilever spring constant: 2.8 N/m and resonance frequency: 75 kHz. SCM images were taken with a fixed bias frequency of 50 kHz, SCM lock-in phase of 90°and capacitance sensor frequency of 910 MHz. The amplitude of direct current (DC)/direct voltage signal is strongly dependent on the modulation voltages and the magnitude of capacitance variation is generally a nonlinear function of the carrier concentration. Figure 2 shows the topography and SCM image. The contrast between Si-nc and the oxide layer was clear in SCM image which indicates that the Si-nc has different capacitance from the oxide layer.


Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy.

Lin Z, Bremond G, Bassani F - Nanoscale Res Lett (2011)

Si nanocrystal images. (a) Topography (b) SCM data image.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211215&req=5

Figure 2: Si nanocrystal images. (a) Topography (b) SCM data image.
Mentions: Veeco Digital Instruments 3100 Dimensions AFM employing a Nanoscope V controller was used to conduct SCM and SCS measurements. The conductive tip that was selected was commercial Arrow-EFM PtIr coating tip. It has an average tip radius of less than 10 nm, cantilever spring constant: 2.8 N/m and resonance frequency: 75 kHz. SCM images were taken with a fixed bias frequency of 50 kHz, SCM lock-in phase of 90°and capacitance sensor frequency of 910 MHz. The amplitude of direct current (DC)/direct voltage signal is strongly dependent on the modulation voltages and the magnitude of capacitance variation is generally a nonlinear function of the carrier concentration. Figure 2 shows the topography and SCM image. The contrast between Si-nc and the oxide layer was clear in SCM image which indicates that the Si-nc has different capacitance from the oxide layer.

Bottom Line: Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature.The DC spectra curve shift direction and distance was observed differently for quantitative measurements.Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institut des Nanotechnologies de Lyon, UMR 5270, Institut National des Sciences Appliquées de Lyon, Université de Lyon, Bât, Blaise Pascal, 20, avenue Albert Einstein - 69621 Villeurbanne Cedex, France. zhen.lin@insa-lyon.fr.

ABSTRACT
In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

No MeSH data available.


Related in: MedlinePlus